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STM32H747AI 데이터시트(PDF) 128 Page - STMicroelectronics |
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STM32H747AI 데이터시트(HTML) 128 Page - STMicroelectronics |
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128 / 252 page ![]() Electrical characteristics STM32H747xI/G 118/242 DS12930 Rev 1 Table 46. Typical and maximum current consumption in Standby Symbol Parameter Conditions Typ Max(1) Unit 1.62 V 2.4 V 3 V 3.3 V 3 V Backup SRAM RTC and LSE Tj=25 °C Tj=85 °C Tj=105 °C Tj=125 °C IDD (Standby) Supply current in Standby mode OFF OFF 1,92 1,95 2,06 2,16 4 18 40 90 µA ON OFF 3,33 3,44 3,6 3,79 8.2 47 83 141 OFF ON 2,43 2,57 2,77 2,95 - - - - ON ON 3,82 4,05 4,31 4,55 - - - - 1. Guaranteed by characterization results, unless otherwise specified. Table 47. Typical and maximum current consumption in VBAT mode Symbol Parameter Conditions Typ Max(1) Unit Backup SRAM RTC and LSE 1.2 V 2 V 3 V 3.4 V 3 V Tj=25 °C Tj=85 °C Tj=105 °C Tj=125 °C IDD (VBAT) Supply current in VBAT mode OFF OFF 0,02 0,02 0,03 0,05 0,5 4,1 10 24 µA ON OFF 1,33 1,45 1,58 1,7 4,4 22 48 87 OFF ON 0,46 0,57 0,75 0,87 - - - - ON ON 1,77 2 2,3 2,5 - - - - 1. Guaranteed by characterization results, unless otherwise specified. |
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