STM32H747AI datasheet(143/252 Pages) STMICROELECTRONICS

143 / 252 page

DS12930 Rev 1

133/242

STM32H747xI/G

Electrical characteristics

221

Note:

For information on selecting the crystal, refer to the application note AN2867 “Oscillator

design guide for ST microcontrollers” available from the ST website www.st.com.

Figure 24. Typical application with a 32.768 kHz crystal

1. An external resistor is not required between OSC32_IN and OSC32_OUT and it is forbidden to add one.

6.3.10

Internal clock source characteristics

The parameters given in Table 54 to Table 57 are derived from tests performed under

ambient temperature and VDD supply voltage conditions summarized in Table 22: General

operating conditions.

48 MHz high-speed internal RC oscillator (HSI48)

ai17531b

OSC32_OU T

OSC32_IN

fLSE

CL1

STM32

32.768 kH z

resonator

Resonator with

integrated capacitors

Bias

controlled

gain

CL2

Table 54. HSI48 oscillator characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

fHSI48

HSI48 frequency

VDD=3.3 V,

TJ=30 °C

47.5(1)

48.5(1) MHz

TRIM(2)

USER trimming step

0.175

USER TRIM

COVERAGE(3)

USER TRIMMING Coverage

± 32 steps

±4.79

±5.60

DuCy(HSI48)(2)

Duty Cycle

ACCHSI48_REL(3)(4)

Accuracy of the HSI48 oscillator over

temperature (factory calibrated)

TJ=-40 to 125 °C

–4.5

3.5

∆VDD(HSI48)(3)

HSI48 oscillator frequency drift with

VDD(5)

VDD=3 to 3.6 V

0.025

0.05

VDD=1.62 V to 3.6 V

0.05

0.1

tsu(HSI48)(2)

HSI48 oscillator start-up time

2.1

4.0

µs

IDD(HSI48)(2)

HSI48 oscillator power consumption

350

400

µA

NT jitter

Next transition jitter

Accumulated jitter on 28 cycles(6)

± 0.15

PT jitter

Paired transition jitter

Accumulated jitter on 56 cycles(6)

± 0.25

1. Guaranteed by test in production.

2. Guaranteed by design.

3. Guaranteed by characterization.

∆fHSI = ACCHSI48_REL + ∆VDD.

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