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STM32H747AI 데이터시트(PDF) 151 Page - STMicroelectronics

부품명 STM32H747AI
상세설명  Dual 32-bit Arm® Cortex®-M7 up to 480MHz and -M4 MCUs, up to 2MB Flash, 1MB RAM, 46 com. and analog interfaces, SMPS, DSI
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제조업체  STMICROELECTRONICS [STMicroelectronics]
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STM32H747AI 데이터시트(HTML) 151 Page - STMicroelectronics

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DS12930 Rev 1
141/242
STM32H747xI/G
Electrical characteristics
221
6.3.14
Memory characteristics
Flash memory
The characteristics are given at TJ = –40 to 125 °C unless otherwise specified.
The devices are shipped to customers with the Flash memory erased.
tWAKEUP Startup delay
CEXT = 2.2 µF
-
80
-
µs
CEXT = 3.3 µF
-
-
160
IINRUSH
Inrush current on VDDDSI
External capacitor load at start
-
60
250
mA
1. Based on test during characterization.
2. CEXT recommended value is 2.2 μF to achieve a better dynamic performance of the regulator. A 1 μF capacitor can be
used only if the minimum value does not drop below 0.5 μF.
Table 62. DSI regulator characteristics(1) (continued)
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Table 63. Flash memory characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
IDD
Supply current
Write / Erase 8-bit mode
-
6.5
-
mA
Write / Erase 16-bit mode
-
11.5
-
Write / Erase 32-bit mode
-
20
-
Write / Erase 64-bit mode
-
35
-
Table 64. Flash memory programming (single bank configuration nDBANK=1)
Symbol
Parameter
Conditions
Min(1)
Typ
Max(1)
Unit
tprog
Word (266 bits) programming
time
Program/erase parallelism x 8
-
290
580(2)
µs
Program/erase parallelism x 16
-
180
360
Program/erase parallelism x 32
-
130
260
Program/erase parallelism x 64
-
100
200
tERASE128KB Sector (128 KB) erase time
Program/erase parallelism x 8
-
2
4
s
Program/erase parallelism x 16
-
1.8
3.6
Program/erase parallelism x 32
-
tME
Mass erase time
Program/erase parallelism x 8
-
13
26
Program/erase parallelism x 16
-
8
16
Program/erase parallelism x 32
-
6
12
Program/erase parallelism x 64
-
5
10



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