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STM32H747AI 데이터시트(PDF) 201 Page - STMicroelectronics |
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STM32H747AI 데이터시트(HTML) 201 Page - STMicroelectronics |
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201 / 252 page ![]() DS12930 Rev 1 191/242 STM32H747xI/G Electrical characteristics 221 6.3.26 Temperature sensor characteristics tSTART Start-up time CL=0.5 µF - - 300 - µs CL=1 µF - - 500 - CL=1.5 µF - - 650 - IINRUSH Control of maximum DC current drive on VREFBUF_OUT during startup phase(3) -- 8 - mA IDDA(VRE FBUF) VREFBUF consumption from VDDA ILOAD = 0 µA - - 15 25 µA ILOAD = 500 µA - - 16 30 ILOAD = 4 mA - - 32 50 1. Guaranteed by design. 2. In degraded mode, the voltage reference buffer cannot accurately maintain the output voltage (VDDA−drop voltage). 3. To properly control VREFBUF IINRUSH current during the startup phase and the change of scaling, VDDA voltage should be in the range of 1.8 V-3.6 V, 2.1 V-3.6 V, 2.4 V-3.6 V and 2.8 V-3.6 V for VSCALE = 011, 010, 001 and 000, respectively. Table 103. VREFBUF characteristics(1) (continued) Symbol Parameter Conditions Min Typ Max Unit Table 104. Temperature sensor characteristics Symbol Parameter Min Typ Max Unit TL(1) 1. Guaranteed by design. VSENSE linearity with temperature - - 3 °C Avg_Slope(2) 2. Guaranteed by characterization. Average slope - 2 - mV/°C V30(3) 3. Measured at VDDA = 3.3 V ± 10 mV. The V30 ADC conversion result is stored in the TS_CAL1 byte. Voltage at 30°C ± 5 °C - 0.62 - V tstart_run Startup time in Run mode (buffer startup) - - 25.2 µs tS_temp(1) ADC sampling time when reading the temperature 9 - - Isens(1) Sensor consumption - 0.18 0.31 µA Isensbuf(1) Sensor buffer consumption - 3.8 6.5 Table 105. Temperature sensor calibration values Symbol Parameter Memory address TS_CAL1 Temperature sensor raw data acquired value at 30 °C, VDDA=3.3 V 0x1FF1 E820 -0x1FF1 E821 TS_CAL2 Temperature sensor raw data acquired value at 110 °C, VDDA=3.3 V 0x1FF1 E840 - 0x1FF1 E841 |
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