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STM32H747AI 데이터시트(PDF) 206 Page - STMicroelectronics

부품명 STM32H747AI
상세설명  Dual 32-bit Arm® Cortex®-M7 up to 480MHz and -M4 MCUs, up to 2MB Flash, 1MB RAM, 46 com. and analog interfaces, SMPS, DSI
PDF  252 Pages
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STM32H747AI 데이터시트(HTML) 206 Page - STMicroelectronics

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Electrical characteristics
STM32H747xI/G
196/242
DS12930 Rev 1
6.3.31
Digital filter for Sigma-Delta Modulators (DFSDM) characteristics
Unless otherwise specified, the parameters given in Table 112 for DFSDM are derived from
tests performed under the ambient temperature, fPCLKx frequency and supply voltage
conditions summarized in Table 22: General operating conditions.
Output speed is set to OSPEEDRy[1:0] = 10
Capacitive load CL = 30 pF
Measurement points are done at CMOS levels: 0.5VDD
VOS level set to VOS1
Refer to Section 6.3.18: I/O port characteristics for more details on the input/output alternate
function characteristics (DìFSDM_CKINx, DFSDM_DATINx, DFSDM_CKOUT for DFSDM).
PGA BW
PGA bandwidth for
different non inverting gain
Gain=2
-
GBW/2
-
MHz
Gain=4
-
GBW/4
-
Gain=8
-
GBW/8
-
Gain=16
-
GBW/16
-
PGA bandwidth for
different inverting gain
Gain = -1
-
5.00
-
MHz
Gain = -3
-
3.00
-
Gain = -7
-
1.50
-
Gain = -15
-
0.80
-
en
Voltage noise density
at
1 KHz
output loaded
with 4 kΩ
-140
-
nV/√
Hz
at
10 KHz
-55
-
IDDA(OPAMP)
OPAMP consumption from
VDDA
Normal
mode
no Load,
quiescent mode,
follower
-
570
1000
µA
High-
speed
mode
-
610
1200
1.
RLOAD is the resistive load connected to VSSA or to VDDA.
2. R2 is the internal resistance between the OPAMP output and th OPAMP inverting input. R1 is the internal resistance
between the OPAMP inverting input and ground. PGA gain = 1 + R2/R1.
Table 111. Operational amplifier characteristics (continued)
Symbol
Parameter
Conditions
Min
Typ
Max
Unit



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