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STM32H747AI 데이터시트(PDF) 216 Page - STMicroelectronics |
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STM32H747AI 데이터시트(HTML) 216 Page - STMicroelectronics |
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216 / 252 page ![]() Electrical characteristics STM32H747xI/G 206/242 DS12930 Rev 1 SPI interface characteristics Unless otherwise specified, the parameters given in Table 119 for SPI are derived from tests performed under the ambient temperature, fPCLKx frequency and VDD supply voltage conditions summarized in Table 22: General operating conditions, with the following configuration: • Output speed is set to OSPEEDRy[1:0] = 11 • Capacitive load CL = 30 pF • Measurement points are done at CMOS levels: 0.5VDD • IO Compensation cell activated. • HSLV activated when VDD ≤ 2.7 V • VOS level set to VOS1 Refer to Section 6.3.18: I/O port characteristics for more details on the input/output alternate function characteristics (NSS, SCK, MOSI, MISO for SPI). Table 119. SPI characteristics(1) Symbol Parameter Conditions Min Typ Max Unit fSCK SPI clock frequency Master mode 1.62<VDD<3.6 V SPI1, 2, 3 -- 80 MHz Master mode 2.7<VDD<3.6 V SPI1, 2, 3 100 Master mode 1.62<VDD<3.6 V SPI4, 5, 6 50 Slave receiver mode 1.62<VDD<3.6 V 100 Slave mode transmitter/full duplex 2.7<VDD<3.6 V 31 Slave mode transmitter/full duplex 1.62 <VDD<3.6 V 29 tsu(NSS) NSS setup time Slave mode 2 - - - th(NSS) NSS hold time Slave mode 1 - - tw(SCKH), tw(SCKL) SCK high and low time Master mode TPCLK-2 TPCLK TPCLK+2 |
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