STM32G474PBY6TR datasheet(127/236 Pages) STMICROELECTRONICS

127 / 236 page

DS12288 Rev 5

127/236

STM32G474xB STM32G474xC STM32G474xE

Electrical characteristics

200

To complete these trials, ESD stress can be applied directly on the device, over the range of

specification values. When unexpected behavior is detected, the software can be hardened

to prevent unrecoverable errors occurring (see application note AN1015).

Electromagnetic Interference (EMI)

The electromagnetic field emitted by the device are monitored while a simple application is

executed (toggling 2 LEDs through the I/O ports). This emission test is compliant with

IEC 61967-2 standard which specifies the test board and the pin loading.

5.3.12

Electrical sensitivity characteristics

Based on three different tests (ESD, LU) using specific measurement methods, the device is

stressed in order to determine its performance in terms of electrical sensitivity.

Electrostatic discharge (ESD)

Electrostatic discharges (a positive then a negative pulse separated by 1 second) are

applied to the pins of each sample according to each pin combination. The sample size

depends on the number of supply pins in the device (3 parts × (n+1) supply pins). This test

conforms to the ANSI/JEDEC standard.

Table 50. EMI characteristics

Symbol

Parameter

Conditions

Monitored

frequency band

Max vs. [fHSE/fHCLK]

Unit

8 MHz / 170 MHz

SEMI

Peak level

VDD = 3.6 V, TA = 25 °C,

LQFP128 package

compliant with IEC 61967-2

0.1 MHz to 30 MHz

dBµV

30 MHz to 130 MHz

130 MHz to 1 GHz

1 GHz to 2 GHz

EMI Level

3.5

Table 51. ESD absolute maximum ratings

Symbol

Ratings

Conditions

Class

Maximum

value(1)

Unit

VESD(HBM)

Electrostatic discharge

voltage (human body model)

TA = +25 °C, conforming to

ANSI/ESDA/JEDEC JS-001

2000

VESD(CDM)

Electrostatic discharge

voltage (charge device model)

TA = +25 °C, conforming to

ANSI/ESDA/JEDEC JS-

002

LQFP100 and

LQFP128

250

Other

packages

C2a

500

1. Guaranteed by characterization results.

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