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STM32H750VB 데이터시트(PDF) 122 Page - STMicroelectronics |
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STM32H750VB 데이터시트(HTML) 122 Page - STMicroelectronics |
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122 / 335 page ![]() Electrical characteristics (rev Y) STM32H750VB STM32H750ZB STM32H750IB STM32H750XB 122/334 DS12556 Rev 5 Low-speed internal (LSI) RC oscillator 6.3.10 PLL characteristics The parameters given in Table 48 are derived from tests performed under temperature and VDD supply voltage conditions summarized in Table 22: General operating conditions. ΔTEMP (CSI) CSI oscillator frequency drift over temperature TJ = 0 to 85 °C - −3.7(3) 4.5(3) % TJ = −40 to 125 °C - −11(3) 7.5(3) DVDD (CSI) CSI oscillator frequency drift over VDD VDD = 1.62 to 3.6 V - − 0.06 0.06 % tsu(CSI) CSI oscillator startup time - - 1 2 µs tstab(CSI) CSI oscillator stabilization time (to reach ±3% of fCSI) - - 4 8 cycle IDD(CSI) CSI oscillator power consumption - - 23 30 µA 1. Guaranteed by design. 2. Guaranteed by test in production. 3. Guaranteed by characterization. Table 46. CSI oscillator characteristics(1) (continued) Symbol Parameter Conditions Min Typ Max Unit Table 47. LSI oscillator characteristics Symbol Parameter Conditions Min Typ Max Unit fLSI(1) 1. Guaranteed by characterization results. LSI frequency VDD = 3.3 V, TJ = 25 °C 31.4 32 32.6 kHz TJ = –40 to 105 °C, VDD = 1.62 to 3.6 V 29.76 - 33.60 tsu(LSI)(2) 2. Guaranteed by design. LSI oscillator startup time - - 80 130 µs tstab(LSI)(2) LSI oscillator stabilization time (5% of final value) - - 120 170 IDD(LSI)(2) LSI oscillator power consumption - - 130 280 nA Table 48. PLL characteristics (wide VCO frequency range)(1) Symbol Parameter Conditions Min Typ Max Unit fPLL_IN PLL input clock - 2 - 16 MHz PLL input clock duty cycle - 10 - 90 % |
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