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STM32H750VB 데이터시트(PDF) 162 Page - STMicroelectronics |
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STM32H750VB 데이터시트(HTML) 162 Page - STMicroelectronics |
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162 / 335 page ![]() Electrical characteristics (rev Y) STM32H750VB STM32H750ZB STM32H750IB STM32H750XB 162/334 DS12556 Rev 5 being performed on another analog input. It is recommended to add a Schottky diode (pin to ground) to analog pins which may potentially inject negative currents. Any positive injection current within the limits specified for IINJ(PIN) and ΣIINJ(PIN) in Section 6.3.14 does not affect the ADC accuracy. Figure 36. ADC accuracy characteristics (12-bit resolution) 1. Example of an actual transfer curve. 2. Ideal transfer curve. 3. End point correlation line. 4. ET = Total Unadjusted Error: maximum deviation between the actual and the ideal transfer curves. EO = Offset Error: deviation between the first actual transition and the first ideal one. EG = Gain Error: deviation between the last ideal transition and the last actual one. ED = Differential Linearity Error: maximum deviation between actual steps and the ideal one. EL = Integral Linearity Error: maximum deviation between any actual transition and the end point correlation line. ai14395c EO EG 1L SBIDEAL 4095 4094 4093 5 4 3 2 1 0 7 6 1 2 3 456 7 4093 4094 4095 4096 (1) (2) ET ED EL (3) VDDA VSSA V REF+ 4096 (or depending on package)] V DDA 4096 [1LSB IDEAL= |
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