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STM32F730Z8 데이터시트(PDF) 158 Page - STMicroelectronics

부품명 STM32F730Z8
상세설명  Arm® Cortex®-M7 32b MCUFPU, 462DMIPS, 64KB Flash /256164KB RAM, USB OTG HS/FS, 18 TIMs, 3 ADCs, 21 com IF
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STM32F730Z8 데이터시트(HTML) 158 Page - STMicroelectronics

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Electrical characteristics
STM32F730x8
158/202
DS12536 Rev 2
Figure 51. USB OTG full speed timings: definition of data signal rise and fall time
USB high speed (HS) characteristics (through ULPI)
Unless otherwise specified, the parameters given in Table 89 for ULPI are derived from
tests performed under the ambient temperature, fHCLK frequency summarized in Table 88
and VDD supply voltage conditions summarized in Table 87, with the following configuration:
•
Output speed is set to OSPEEDRy[1:0] = 11, unless otherwise specified
•
Capacitive load C = 20 pF, unless otherwise specified
•
Measurement points are done at CMOS levels: 0.5VDD.
Refer to Section 6.3.20: I/O port characteristics for more details on the input/output
characteristics.
Table 86. USB OTG full speed electrical characteristics(1)
1. Guaranteed by design.
Driver characteristics
Symbol
Parameter
Conditions
Min
Max
Unit
tr
Rise time(2)
2. Measured from 10% to 90% of the data signal. For more detailed informations, please refer to USB
Specification - Chapter 7 (version 2.0).
CL = 50 pF
420
ns
tf
Fall time(2)
CL = 50 pF
4
20
ns
trfm
Rise/ fall time matching
tr/tf
90
111
%
VCRS
Output signal crossover voltage
-
1.3
2.0
V
ZDRV
Output driver impedance(3)
3. No external termination series resistors are required on DP (D+) and DM (D-) pins since the matching
impedance is included in the embedded driver.
Driving high or
low
28
44
Ω
Table 87. USB HS DC electrical characteristics
Symbol
Parameter
Min.(1)
1. All the voltages are measured from the local ground potential.
Max.(1)
Unit
Input level
VDD
USB OTG HS operating voltage
1.7
3.6
V
ai14137b
Cross over
points
Differential
data lines
VCRS
VSS
tf
tr



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