IRF644S, SiHF644S

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Vishay Siliconix

S20-0682-Rev. E, 07-Sep-2020

2

Document Number: 91040

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Note

a. When mounted on 1" square PCB (FR-4 or G-10 material)

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)

b. Pulse width

 300 μs; duty cycle  2 %

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

TYP.

MAX.

UNIT

Maximum junction-to-ambient

-62

°C/W

Maximum junction-to-ambient



-40

Maximum junction-to-case (drain)

-1.0

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Static

Drain-source breakdown voltage

250

-

-

V

V

-

0.34

-

V/°C

Gate-source threshold voltage

2.0

-

4.0

V

Gate-source leakage

-

-

± 100

nA

Zero gate voltage drain current

-

-

25

μA

-

-

250

Drain-source on-state resistance

-

-

0.28



Forward transconductance

6.7

-

-

S

Dynamic

Input capacitance

f = 1.0 MHz, see fig. 5

-

1300

-

pF

Output capacitance

-

330

-

Reverse transfer capacitance

-85

-

Total gate charge

--

68

nC

Gate-source charge

--

11

Gate-drain charge

--

35

Turn-on delay time

-11

-

ns

Rise time

-24

-

Turn-off delay time

-53

-

Fall time

-49

-

Gate input resistance

Between lead,



6 mm (0.25") from

package and center of

die contact

-4.5

-

nH

Internal drain inductance

-7.5

-

Internal source inductance

f = 1 MHz, open drain

0.3

-

1.2



Drain-Source Body Diode Characteristics

Continuous source-drain diode current

MOSFET symbol



showing the



integral reverse



p - n junction diode

--

14

A

--

56

Body diode voltage

--

1.8

V

Body diode reverse recovery time

-

250

500

ns

Body diode reverse recovery charge

-2.3

4.6

μC

Forward turn-on time

D

S

G

S

D

G