IRF644STRLPBFA datasheet(3/10 Pages) VISHAY

부품명	IRF644STRLPBFA

상세설명	Power MOSFET

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제조업체	VISHAY [Vishay Siliconix]

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IRF644S, SiHF644S

www.vishay.com

Vishay Siliconix

S20-0682-Rev. E, 07-Sep-2020

3

Document Number: 91040

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Fig. 1 - Typical Output Characteristics, TC = 25 °C

Fig. 2 - Typical Output Characteristics, TC = 150 °C

Fig. 3 - Typical Transfer Characteristics

Fig. 4 - Normalized On-Resistance vs. Temperature

Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage

Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage

91040_01

Bottom

Top

V

GS

15 V

10 V

8.0 V

7.0 V

6.0 V

5.5 V

5.0 V

4.5 V

20 µs Pulse Width

T

C = 25 °C

4.5 V

VDS, Drain-to-Source Voltage (V)

100

101

100

10-1

101

100

10-1

100

101

VDS, Drain-to-Source Voltage (V)

Bottom

Top

V

GS

15 V

10 V

8.0 V

7.0 V

6.0 V

5.5 V

5.0 V

4.5 V

20 µs Pulse Width

T

C = 150 °C

91040_02

4.5 V

20 µs Pulse Width

V

DS = 50 V

101

100

10-1

VGS, Gate-to-Source Voltage (V)

567

8

9

10

4

25

°C

150

°C

91040_03

I

D = 7.9 A

V

GS = 10 V

3.0

0.0

0.5

1.0

1.5

2.0

2.5

TJ, Junction Temperature (°C)

91040_04

- 60 - 40 - 20 0

20 40 60 80 100 120 140 160

3000

2400

1800

1200

0

600

100

101

VDS, Drain-to-Source Voltage (V)

C

iss

C

rss

C

oss

V

GS = 0 V, f = 1 MHz

C

iss = Cgs + Cgd, Cds Shorted

C

rss = Cgd

C

oss = Cds + Cgd

91040_05

QG, Total Gate Charge (nC)

20

16

12

8

0

4

010

50

40

30

20

V

DS = 50 V

V

DS = 125 V

For test circuit

see figure 13

V

DS = 200 V

91040_06

I

D = 7.9 A

60

70

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