IRF644S, SiHF644S

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Vishay Siliconix

S20-0682-Rev. E, 07-Sep-2020

4

Document Number: 91040

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Fig. 7 - Typical Source-Drain Diode Forward Voltage

Fig. 8 - Maximum Safe Operating Area

Fig. 9 - Maximum Drain Current vs. Case Temperature

Fig. 10a - Switching Time Test Circuit

Fig. 10b - Switching Time Waveforms

Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

0.5

0.9

0.8

0.7

0.6

25

150

V

91040_07

1.1

1.0

Operation in this area limited

by R

DS(on)

T

T

Single Pulse

2

5

1

2

5

10

2

5

25

110

25

25

91040_08

4

6

8

10

12

14

25

150

125

100

75

50

91040_09

0

2

Pulse width

≤ 1 µs

Duty factor

≤ 0.1 %

R

D

V

GS

R

g

D.U.T.

10 V

+

-

V

DS

V

DD

V

DS

90 %

10 %

V

GS

t

d(on)

t

r

t

d(off)

t

f

10

1

0.1

0.1

1

10

P

DM

t

1

t

2

Notes:

1. Duty Factor, D = t

2. Peak T

Single Pulse

(Thermal Response)

0

− 0.5

0.2

0.1

0.05

0.02

0.01

91040_11