| 전자부품 데이터시트 검색엔진 |
|
ST25DV64K 데이터시트(PDF) 146 Page - STMicroelectronics |
|
|
|||||||||||||||||||||||||||||
ST25DV64K 데이터시트(HTML) 146 Page - STMicroelectronics |
|
146 / 200 page ![]() 9.3 GPO characteristics This section summarizes the operating and measurement conditions of the GPO feature. The parameters in the DC and AC characteristic tables that follow are derived from tests performed under the measurement conditions summarized in the relevant tables. Table 250. GPO DC characteristics up to 85°C Symbol Parameter Condition Min Typ Max Unit VOL_GPO_CMOS Output low voltage (GPO CMOS) VDCG = 1.8 V, IOL = 0.5 mA - - 0.4 V VDCG = 3.3 V, IOL = 0.5 mA - - 0.4 VDCG = 5.5 V, IOL = 0.5 mA - - 0.4 VOH_GPO_CMOS Output high voltage (GPO CMOS) VDCG = 1.8 V, IOH = - 0.5 mA VDCG - 0.4 - - V VDCG = 3.3 V, IOH = - 0.5 mA VDCG - 0.4 - - VDCG = 5.5 V, IOH = - 0.5 mA VDCG - 0.4 - - VOL_GPO_OD Output low voltage (GPO open drain) IOL = 1 mA, VCC = 1.8 V - 0.28 0.4 V IOL = 1 mA, VCC = 3.3 V - 0.20 0.4 IOL = 1 mA, VCC = 5.5 V - 0.20 0.4 IL_GPO_OD Output leakage (GPO open drain) GPO in Hi-Z, external voltage applied on: GPO, VSS or VCC - 0.15 0.06 0.15 µA ILI_VDGC Input leakage (VDGC) VDGC = 5.5 V - - 0.1 µA Table 251. GPO DC characteristics up to 125°C Symbol Parameter Condition Min Typ Max Unit VOL_GPO_CMOS Output low voltage (GPO CMOS) VDCG = 1.8 V, IOL = 0.5 mA - - 0.4 V VDCG = 3.3 V, IOL = 0.5 mA - - 0.4 VDCG = 5.5 V, IOL = 0.5 mA - - 0.4 VOH_GPO_CMOS Output high voltage (GPO CMOS) VDCG = 1.8 V, IOH = - 0.5 mA VDCG - 0.4 - - V VDCG = 3.3 V, IOH = - 0.5 mA VDCG - 0.4 - - VDCG = 5.5 V, IOH = - 0.5 mA VDCG - 0.4 - - VOL_GPO_OD Output low voltage (GPO open drain) IOL = 1 mA, VCC = 1.8 V - 0.28 0.4 V IOL = 1 mA, VCC = 3.3 V - 0.22 0.4 IOL = 1 mA, VCC = 5.5 V - 0.21 0.4 IL_GPO_OD Output leakage (GPO open drain) GPO in Hi-Z, external voltage applied on GPO: VSS or VCC - 0.15 0.06 0.15 µA ILI_VDGC Input leakage (VDGC) VDGC = 5.5 V - - 0.1 µA Table 252. GPO AC characteristics Symbol Parameter Condition Min Max Unit tr_GPO_CMOS Output rise time CL = 30 pF, VDCG = 1.8 V to 5.5 V - 50 ns tf_GPO_CMOS Output fall time CL = 30 pF, VDCG = 1.8 V to 5.5 V - 50 ST25DV04K ST25DV16K ST25DV64K GPO characteristics DS10925 - Rev 9 page 146/200 |
|
링크 URL |
| ALLDATASHEET 가 귀하에 도움이 되셨나요? [ DONATE ] |
Alldatasheet는? | 광고문의 | 운영자에게 연락하기 | 개인정보취급방침 | 링크 투 데이터시트 | 링크교환 | 제조사별 검색 All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |