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STM32L151XE 데이터시트(PDF) 105 Page - STMicroelectronics

부품명 STM32L151XE
상세설명  Ultra-low-power 32-bit MCU Arm®-based Cortex®-M3 with 512KB Flash, 80KB SRAM, 16KB EEPROM, LCD, USB, ADC, DAC
PDF  136 Pages
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제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
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DS10002 Rev 10
105/136
STM32L151xE STM32L152xE
Electrical characteristics
114
Table 56. ADC accuracy(1)(2)
Symbol
Parameter
Test conditions
Min(3)
Typ
Max(3) Unit
ET
Total unadjusted error
2.4 V
≤ VDDA ≤ 3.6 V
2.4 V
≤ VREF+ ≤ 3.6 V
fADC = 8 MHz, RAIN = 50 Ω
TA = -40 to 105 °C
-2.5
4
LSB
EO
Offset error
-
1
2
EG
Gain error
-
1.5
3.5
ED
Differential linearity error
-
1
2
EL
Integral linearity error
-
2.2
3
ENOB
Effective number of bits
2.4 V
≤ VDDA ≤ 3.6 V
VDDA = VREF+
fADC = 16 MHz, RAIN = 50 Ω
TA = -40 to 105 °C
Finput=10kHz
9.2
10
-
bits
SINAD
Signal-to-noise and
distortion ratio
57.5
62
-
dB
SNR
Signal-to-noise ratio
57.5
62
-
THD
Total harmonic distortion
-
-70
-65
ENOB
Effective number of bits
1.8 V
≤ VDDA ≤ 2.4 V
VDDA = VREF+
fADC = 8 MHz or 4 MHz, RAIN = 50 Ω
TA = -40 to 105 °C
Finput=10kHz
9.2
10
-
bits
SINAD
Signal-to-noise and
distortion ratio
57.5
62
-
dB
SNR
Signal-to-noise ratio
57.5
62
-
THD
Total harmonic distortion
-
-70
-65
ET
Total unadjusted error
2.4 V
≤ VDDA ≤ 3.6 V
1.8 V
≤ VREF+ ≤ 2.4 V
fADC = 4 MHz, RAIN = 50 Ω
TA = -40 to 105 °C
-4
6.5
LSB
EO
Offset error
-
1.5
4
EG
Gain error
-
3.5
6
ED
Differential linearity error
-
1
2
EL
Integral linearity error
-
2.5
3
ET
Total unadjusted error
1.8 V
≤ VDDA ≤ 2.4 V
1.8 V
≤ VREF+ ≤ 2.4 V
fADC = 4 MHz, RAIN = 50 Ω
TA = -40 to 105 °C
-2
3
LSB
EO
Offset error
-
1
1.5
EG
Gain error
-
1.5
2
ED
Differential linearity error
-
1
2
EL
Integral linearity error
-
2.2
3
1. ADC DC accuracy values are measured after internal calibration.
2. ADC accuracy vs. negative injection current: Injecting a negative current on any analog input pins must be avoided as this
significantly reduces the accuracy of the conversion being performed on another analog input. It is recommended to add a
Schottky diode (pin to ground) to analog pins which may potentially inject negative currents.
Any positive injection current within the limits specified for IINJ(PIN) and ΣIINJ(PIN) in Section 6.3.12 does not affect the ADC
accuracy.
3. Guaranteed by characterization results.



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