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전자부품 데이터시트 검색엔진 |
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IRFP054 데이터시트(PDF) 2 Page - Vishay Siliconix |
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IRFP054 데이터시트(HTML) 2 Page - Vishay Siliconix |
2 / 11 page ![]() www.vishay.com Document Number: 91200 2 S11-0447-Rev. C, 14-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRFP054, SiHFP054 Vishay Siliconix Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %. THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. UNIT Maximum Junction-to-Ambient RthJA -40 °C/W Case-to-Sink, Flat, Greased Surface RthCS 0.24 - Maximum Junction-to-Case (Drain) RthJC -0.65 SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 μA 60 - - V VDS Temperature Coefficient ΔVDS/TJ Reference to 25 °C, ID = 1 mA - 0.056 - V/°C Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 μA 2.0 - 4.0 V Gate-Source Leakage IGSS VGS = ± 20 V - - ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 60 V, VGS = 0 V - - 25 μA VDS = 48 V, VGS = 0 V, TJ = 150 °C - - 250 Drain-Source On-State Resistance RDS(on) VGS = 10 V ID = 54 Ab -- 0.014 Ω Forward Transconductance gfs VDS = 25 V, ID = 54 Ab 25 - - S Dynamic Input Capacitance Ciss VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5 - 4500 - pF Output Capacitance Coss - 2000 - Reverse Transfer Capacitance Crss - 300 - Total Gate Charge Qg VGS = 10 V ID = 64 A, VDS = 48 V, see fig. 6 and 13b - - 160 nC Gate-Source Charge Qgs -- 48 Gate-Drain Charge Qgd -- 54 Turn-On Delay Time td(on) VDD = 30 V, ID = 64 A , Rg = 6.2 Ω, RD = 0.45 Ω, see fig. 10b -20 - ns Rise Time tr - 160 - Turn-Off Delay Time td(off) -83 - Fall Time tf - 150 - Internal Drain Inductance LD Between lead, 6 mm (0.25") from package and center of die contact -5.0 - nH Internal Source Inductance LS -13 - Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS MOSFET symbol showing the integral reverse p - n junction diode -- 70 A Pulsed Diode Forward Currenta ISM - - 360 Body Diode Voltage VSD TJ = 25 °C, IS = 90 A, VGS = 0 Vb -- 2.5 V Body Diode Reverse Recovery Time trr TJ = 25 °C, IF = 6.4 A, dI/dt = 100 A/μsb - 270 540 ns Body Diode Reverse Recovery Charge Qrr -1.1 2.2 μC Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) D S G S D G |
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