www.vishay.com

Document Number: 91200

2

S11-0447-Rev. C, 14-Mar-11

This datasheet is subject to change without notice.

IRFP054, SiHFP054

Vishay Siliconix

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. Pulse width

≤ 300 μs; duty cycle ≤ 2 %.

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

TYP.

MAX.

UNIT

Maximum Junction-to-Ambient

-40

°C/W

Case-to-Sink, Flat, Greased Surface

0.24

-

Maximum Junction-to-Case (Drain)

-0.65

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Static

Drain-Source Breakdown Voltage

60

-

-

V

-

0.056

-

V/°C

Gate-Source Threshold Voltage

2.0

-

4.0

V

Gate-Source Leakage

-

-

± 100

nA

Zero Gate Voltage Drain Current

-

-

25

μA

-

-

250

Drain-Source On-State Resistance

--

0.014

Ω

Forward Transconductance

25

-

-

S

Dynamic

Input Capacitance

f = 1.0 MHz, see fig. 5

-

4500

-

pF

Output Capacitance

-

2000

-

Reverse Transfer Capacitance

-

300

-

Total Gate Charge

-

-

160

nC

Gate-Source Charge

--

48

Gate-Drain Charge

--

54

Turn-On Delay Time

-20

-

ns

Rise Time

-

160

-

Turn-Off Delay Time

-83

-

Fall Time

-

150

-

Internal Drain Inductance

Between lead,

6 mm (0.25") from

package and center of

die contact

-5.0

-

nH

Internal Source Inductance

-13

-

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

MOSFET symbol

showing the

integral reverse

p - n junction diode

--

70

A

-

-

360

Body Diode Voltage

--

2.5

V

Body Diode Reverse Recovery Time

-

270

540

ns

Body Diode Reverse Recovery Charge

-1.1

2.2

μC

Forward Turn-On Time

D

S

G

S

D

G