BP104, BP104S

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Vishay Semiconductors

Rev. 1.6, 24-Aug-11

1

Document Number: 81500

For technical questions, contact: detectortechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Silicon PIN Photodiode

DESCRIPTION

BP104 is a PIN photodiode with high speed and high radiant

sensitivity in miniature, flat, top view plastic package with

daylight blocking filter. Filter bandwidth is matched with

900 nm to 950 nm IR emitters.

BP104S is packed in tubes, specifications like BP104.

FEATURES

• Package type: leaded

• Package form: top view

• Dimensions (in mm): 5.4 x 4.3 x 3.2

• Radiant sensitive area (in mm2): 7.5

• High radiant sensitivity

• Daylight blocking filter matched with 940 nm

emitters

• Fast response times

• Angle of half sensitivity:

ϕ = ± 65°

• Compliant

to

RoHS

Directive

2002/95/EC

and

in

accordance to WEEE 2002/96/EC

Note

** Please see document “Vishay Material Category Policy”:

www.vishay.com/doc?99902

APPLICATIONS

• High speed detector for infrared radiation

• Infrared remote control and free air data transmission

systems, e.g. in combination with TSALxxxx series IR

emitters

Note

• Test condition see table “Basic Characteristics”

Note

• MOQ: minimum order quantity

948386_1

PRODUCT SUMMARY

COMPONENT

Ira (μA)

ϕ (deg)

λ0.5 (nm)

BP104

45

± 65

870 to 1050

BP104S

45

± 65

870 to 1050

ORDERING INFORMATION

ORDERING CODE

PACKAGING

REMARKS

PACKAGE FORM

BP104

Bulk

MOQ: 3000 pcs, 3000 pcs/bulk

Top view

BP104S

Tube

MOQ: 1800 pcs, 45 pcs/tube

Top view

ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)

PARAMETER

TEST CONDITION

SYMBOL

VALUE

UNIT

Reverse voltage

VR

60

V

Power dissipation

Tamb

≤ 25 °C

PV

215

mW

Junction temperature

Tj

100

°C

Operating temperature range

Tamb

- 40 to + 100

°C

Storage temperature range

Tstg

- 40 to + 100

°C

Soldering temperature

t

≤ 3 s

Tsd

260

°C

Thermal resistance junction/ambient

Connected with Cu wire, 0.14 mm2

RthJA

350

K/W