SIGC28T60

Edited by INFINEON Technologies AI PS DD CLS, L7561A, Edition 2, 27.01.2005

IGBT

3

Chip

This chip is used for:

•

power module

•

discrete components

FEATURES:

•

600V Trench & Field Stop technology

•

•

low turn-off losses

•

short tail current

•

positive temperature coefficient

•

easy paralleling

Applications:

•

drives

G

C

E

Chip Type

Die Size

Package

Ordering Code

SIGC28T60

600V

50A

6.57 x 4.2 mm

2

sawn on foil

Q67050-

A4337-A101

MECHANICAL PARAMETER:

Raster size

6.57 x 4.2

Emitter pad size

2.166 x 3.401

2.432 x 3.401

Gate pad size

0.817 x 1.52

mm

2

Area total / active

27.6 / 20

mm

2

Thickness

70

µm

Wafer size

150

mm

Flat position

90

deg

Max. possible chips per wafer

457 pcs

Passivation frontside

Photoimide

Emitter metallization

3200 nm AlSiCu

Collector metallization

1400 nm Ni Ag –system

suitable for epoxy and soft solder die bonding

Die bond

electrically conductive glue or solder

Wire bond

Al, <500µm

Reject ink dot size

∅ 0.65mm ; max 1.2mm

Recommended storage environment

store in original container, in dry nitrogen,

< 6 month at an ambient temperature of 23°C