SIGC32T120R3L

Edited by INFINEON Technologies AI PS DD HV3, L7641B, Edition 2, 04.09.03

IGBT

3

Chip

This chip is used for:

•

power module

FEATURES:

•

1200V Trench + Field Stop technology

•

120µm chip

•

low turn-off losses

•

short tail current

•

positive temperature coefficient

•

easy paralleling

Applications:

•

drives

G

C

E

Chip Type

Die Size

Package

Ordering Code

SIGC32T120R3L

1200V

25A

6.5 x 4.87 mm

2

sawn on foil

Q67050-

A4206-A101

MECHANICAL PARAMETER:

Raster size

6.5 x 4.87

Emitter pad size ( include gate pad )

3.4 x 4.99

Gate pad size

1.14 x 1.14

mm

Area total / active

31.6 / 21.5

mm

2

Thickness

120

µm

Wafer size

150

mm

Flat position

180

grd

Max.possible chips per wafer

454 pcs

Passivation frontside

Photoimide

Emitter metallization

3200 nm AlSiCu

Collector metallization

1400 nm Ni Ag –system

suitable for epoxy and soft solder die bonding

Die bond

electrically conductive glue or solder

Wire bond

Al, <500µm

Reject Ink Dot Size

∅ 0.65mm ; max 1.2mm

Recommended Storage Environment

store in original container, in dry nitrogen,

< 6 month at an ambient temperature of 23°C