Q67050-A4109-A001 datasheet(2/4 Pages) INFINEON

부품명	Q67050-A4109-A001

상세설명	IGBT3 Chip

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제조업체	INFINEON [Infineon Technologies AG]

홈페이지	http://www.infineon.com

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SIGC158T120R3

Edited by INFINEON Technologies AI PS DD HV3, L7691A, Edition 2, 04.09.2003

MAXIMUM RATINGS:

Parameter

Symbol

Value

Unit

Collector-emitter voltage, Tj=25 °C

V CE

1200

V

DC collector current, limited by Tjmax

I C

1 )

A

Pulsed collector current, tp limited by Tjmax

I cpuls

450

A

Gate emitter voltage

V GE

±20

V

Operating junction and storage temperature

Tj, Tstg

-55 ... +150

°C

1 ) depending on thermal properties of assembly

STATIC CHARACTERISTICS (tested on chip), Tj=25 °C, unless otherwise specified:

Value

Parameter

Symbol

Conditions

min.

typ.

max.

Unit

Collector-emitter breakdown voltage

V(BR)CES

VGE=0V , IC= 6 mA

1200

Collector-emitter saturation voltage

VCE(sat)

VGE=15V, IC=150A

1.4

1.7

2.1

Gate-emitter threshold voltage

VGE(th)

IC=6mA , VGE=VCE

5.0

5.8

6.5

V

Zero gate voltage collector current

ICES

VCE=1200V , VGE=0V

20

µA

Gate-emitter leakage current

IGES

VCE=0V , VGE=20V

600

nA

Integrated gate resistor

RGint

5

Ω

ELECTRICAL CHARACTERISTICS (tested at component):

Value

Parameter

Symbol

Conditions

min.

typ.

max.

Unit

Input capacitance

Ciss

10766

Output capacitance

Coss

563

Reverse transfer capacitance

Crss

V CE=25V,

V GE=0V,

f =1MHz

488

pF

SWITCHING CHARACTERISTICS (tested at component), Inductive Load

Value

Parameter

Symbol

Conditions

1)

min.

typ.

max.

Unit

Turn-on delay time

t d(on)

300

Rise time

t r

95

Turn-off delay time

t d(off)

650

Fall time

t f

Tj=125 ° C

V CC =600V,

I C =150A,

V GE= - 15/15V,

RG= 8.2Ω

180

ns

1) values also influenced by parasitic L- and C- in measurement and package.

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