Nexperia

BC806 series

80 V, 500 mA PNP general-purpose transistors

10. Characteristics

Table 8. Characteristics

Tamb = 25 °C unless otherwise specified.

Symbol

Parameter

Conditions

Min

Typ

Max Unit

V(BR)CBO

collector-base

breakdown voltage

IC = -100 µA; IE = 0 A

-80

-

V

V(BR)CEO

collector-emitter

breakdown voltage

IC = -2 mA; IE = 0 A

-80

-

V

V(BR)EBO

emitter-base

breakdown voltage

IE = -100 µA; IC = 0 A

-8

-

V

VCB = -64 V; IE = 0 A

-

-

-100 nA

ICBO

collector-base

cut-off current

VCB = -64 V; IE = 0 A; Tj = 150 °C

-

-

-5

μA

IEBO

emitter-base

cut-off current

VEB = -6.4 V; IC = 0 A

-

-

-100 nA

DC current gain

BC806-16

VCE = -1 V; IC = -100 mA

[1] 100

-

250

BC806-25

VCE = -1 V; IC = -100 mA

[1] 160

-

400

hFE

VCE = -2 V; IC = -500 mA

[1] 30

-

-

IC = -100 mA; IB = -10 mA

[1] -

-

-150 mV

VCEsat

collector-emitter

saturation voltage

IC = -500 mA; IB = -50 mA

[1] -

-

-400 mV

VBE

base-emitter voltage

VCE = -1 V; IC = -500 mA

[1] -

-

-1.2

V

fT

transition frequency

VCE = -5 V; IC = -50 mA; f = 100 MHz

80

-

-

MHz

Cc

collector capacitance

VCB = -10 V; IE = ie = 0 A; f = 1 MHz

-

5

-

pF

[1] pulsed; tp ≤ 300 μs; δ ≤ 0.02

BC806_SER

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Nexperia B.V. 2019. All rights reserved

Product data sheet

Rev. 2 — 5 November 2019

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