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STM32H7 데이터시트(PDF) 114 Page - STMicroelectronics

부품명 STM32H7
상세설명  32-bit Arm® Cortex®-M7 480MHz MCUs, up to 2MB flash, up to 1MB RAM, 46 com. and analog interfaces
PDF  357 Pages
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제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STM32H7 데이터시트(HTML) 114 Page - STMicroelectronics

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Electrical characteristics (rev Y)
STM32H742xI/G STM32H743xI/G
114/357
DS12110 Rev 10
Table 36. Typical and maximum current consumption in Stop mode, regulator ON
Symbol
Parameter
Conditions
Typ
Max(1)
unit
TJ =
25°C
TJ =
85°C
TJ =
105°C
TJ =
125°C
IDD(Stop)
D1Stop,
D2Stop,
D3Stop
Flash
memory in
low-power
mode, no
IWDG
SVOS5
1.4
7.2(2)
49
75(2)
140
mA
SVOS4
1.95
11
66
110
200
SVOS3
2.85
16(2)
91
150(2)
240
Flash
memory ON,
no IWDG
SVOS5
1.65
7.2
49
75
140
SVOS4
2.2
11
66
110
180
SVOS3
3.15
16
91
150
300
D1Stop,
D2Standby,
D3Stop
Flash
memory
OFF, no
IWDG
SVOS5
0.99
5.1
35
60
97
SVOS4
1.4
7.5
47
79
130
SVOS3
2.05
12
64
110
170
Flash
memory ON,
no IWDG
SVOS5
1.25
5.5
35
61
98
SVOS4
1.65
7.8
47
80
130
SVOS3
2.3
12
65
110
170
D1Standby,
D2Stop,
D3Stop
Flash OFF,
no IWDG
SVOS5
0.57
3
21
36
57
SVOS4
0.805
4.5
27
47
74
SVOS3
1.2
6.7
37
63
99
D1Standby,
D2Standby,
D3Stop
SVOS5
0.17
1.1(2)
813(2)
20
SVOS4
0.245
1.5
11
17
26
SVOS3
0.405
2.4(2)
15
23(2)
35
1. Guaranteed by characterization results.
2. Guaranteed by test in production.
Table 37. Typical and maximum current consumption in Standby mode
Symbol
Parameter
Conditions
Typ(3)
Max (3 V)(1)
Unit
Backup
SRAM
RTC
& LSE
1.62 V 2.4 V
3 V
3.3 V
TJ =
25°C
TJ =
85°C
TJ =
105°C
TJ =
125°C
IDD
(Standby)
Supply
current in
Standby
mode
OFF
OFF
1.8
1.9
1.95
2.05
4(2)
18(3)
40(2)
90(3)
µA
ON
OFF
3.4
3.4
3.5
3.7
8.2(3)
47(3)
83(3)
141(3)
OFF
ON
2.4
3.5
3.86
4.12
-
-
-
-
ON
ON
3.95
5.1
5.46
5.97
-
-
-
-
1. The maximum current consumption values are given for PDR OFF (internal reset OFF). When the PDR is OFF (internal
reset OFF), the current consumption is reduced by 1.2 µA compared to PDR ON.
2. Guaranteed by test in production.
3. Guaranteed by characterization results.



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