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STM32H7 데이터시트(PDF) 129 Page - STMicroelectronics

부품명 STM32H7
상세설명  32-bit Arm® Cortex®-M7 480MHz MCUs, up to 2MB flash, up to 1MB RAM, 46 com. and analog interfaces
PDF  357 Pages
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제조업체  STMICROELECTRONICS [STMicroelectronics]
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STM32H7 데이터시트(HTML) 129 Page - STMicroelectronics

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DS12110 Rev 10
129/357
STM32H742xI/G STM32H743xI/G
Electrical characteristics (rev Y)
320
64 MHz high-speed internal RC oscillator (HSI)
4 MHz low-power internal RC oscillator (CSI)
1. Guaranteed by test in production.
2. Guaranteed by design.
3. Guaranteed by characterization.
4. These values are obtained by using the formula:
(Freq(3.6V) - Freq(3.0V)) / Freq(3.0V) or (Freq(3.6V) - Freq(1.62V)) / Freq(1.62V).
5. Jitter measurements are performed without clock source activated in parallel.
Table 47. HSI oscillator characteristics(1)
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
fHSI
HSI frequency
VDD=3.3 V, TJ=30 °C
63.7(2)
64
64.3(2)
MHz
TRIM
HSI user trimming step
Trimming is not a multiple
of 32
-
0.24
0.32
%
Trimming is 128, 256 and
384
−5.2
−1.8
-
Trimming is 64, 192, 320
and 448
−1.4
−0.8
-
Other trimming are a
multiple of 32 (not
including multiple of 64
and 128)
−0.6
−0.25
-
DuCy(HSI) Duty Cycle
-
45
-
55
%
ΔVDD (HSI)
HSI oscillator frequency drift over
VDD (reference is 3.3 V)
VDD=1.62 to 3.6 V
−0.12
-
0.03
%
ΔTEMP (HSI)
HSI oscillator frequency drift over
temperature (reference is 64 MHz)
TJ=-20 to 105 °C
−1(3)
-1(3)
%
TJ=−40 to TJmax °C
−2(3)
-1(3)
tsu(HSI)
HSI oscillator start-up time
-
-
1.4
2
µs
tstab(HSI)
HSI oscillator stabilization time
at 1% of target frequency
-
4
8
µs
IDD(HSI)
HSI oscillator power consumption
-
-
300
400
µA
1. Guaranteed by design unless otherwise specified.
2. Guaranteed by test in production.
3. Guaranteed by characterization.
Table 48. CSI oscillator characteristics(1)
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
fCSI
CSI frequency
VDD=3.3 V, TJ=30 °C
3.96(2)
44.04(2)
MHz
TRIM
Trimming step
-
-
0.35
-
%
DuCy(CSI)
Duty Cycle
-
45
-
55
%



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