STM32H7 datasheet(135/357 Pages) STMICROELECTRONICS

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DS12110 Rev 10

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STM32H742xI/G STM32H743xI/G

Electrical characteristics (rev Y)

320

Prequalification trials

Most of the common failures (unexpected reset and program counter corruption) can be

reproduced by manually forcing a low state on the NRST pin or the Oscillator pins for 1

second.

To complete these trials, ESD stress can be applied directly on the device, over the range of

specification values. When unexpected behavior is detected, the software can be hardened

to prevent unrecoverable errors occurring (see application note AN1015).

Electromagnetic Interference (EMI)

The electromagnetic field emitted by the device are monitored while a simple application,

executing EEMBC code, is running. This emission test is compliant with SAE IEC61967-2

standard which specifies the test board and the pin loading.

Table 56. EMI characteristics for fHSE = 8 MHz and fCPU = 400 MHz

Symbol Parameter

Conditions

Monitored

frequency band

Max vs.

[fHSE/fCPU]

Unit

8/400 MHz

SEMI

Peak (1)

VDD = 3.6 V, TA = 25 °C, UFBGA240 package,

compliant with IEC61967-2

0.1 MHz to

30 MHz

dBµV

30 MHz to

130 MHz

130 MHz to 1 GHz

1 GHz to 2 GHz

Level (2)

0.1 MHz to 2 GHz

2.5

1. Refer to AN1709 “EMI radiated test” chapter.

2. Refer to AN1709 “EMI level classification” chapter.

STM32H7 데이터시트(PDF) 135 Page - STMicroelectronics