STM32H7 datasheet(148/357 Pages) STMICROELECTRONICS

148 / 357 page

Electrical characteristics (rev Y)

STM32H742xI/G STM32H743xI/G

148/357

DS12110 Rev 10

Table 66. Asynchronous non-multiplexed SRAM/PSRAM/NOR read timings(1)

Symbol

Parameter

Min

Max

Unit

tw(NE)

FMC_NE low time

2Tfmc_ker_ck − 12 Tfmc_ker_ck +1

tv(NOE_NE)

FMC_NEx low to FMC_NOE low

0.5

tw(NOE)

FMC_NOE low time

2Tfmc_ker_ck − 12Tfmc_ker_ck + 1

th(NE_NOE)

FMC_NOE high to FMC_NE high hold time

tv(A_NE)

FMC_NEx low to FMC_A valid

0.5

th(A_NOE)

Address hold time after FMC_NOE high

tv(BL_NE)

FMC_NEx low to FMC_BL valid

0.5

th(BL_NOE)

FMC_BL hold time after FMC_NOE high

tsu(Data_NE)

Data to FMC_NEx high setup time

tsu(Data_NOE)

Data to FMC_NOEx high setup time

th(Data_NOE)

Data hold time after FMC_NOE high

th(Data_NE)

Data hold time after FMC_NEx high

tv(NADV_NE)

FMC_NEx low to FMC_NADV low

tw(NADV)

FMC_NADV low time

Tfmc_ker_ck + 1

1. Guaranteed by characterization results.

Table 67. Asynchronous non-multiplexed SRAM/PSRAM/NOR read - NWAIT timings(1)(2)

Symbol

Parameter

Min

Max

Unit

tw(NE)

FMC_NE low time

7Tfmc_ker_ck +1

tw(NOE)

FMC_NWE low time

5Tfmc_ker_ck −15Tfmc_ker_ck +1

tw(NWAIT)

FMC_NWAIT low time

Tfmc_ker_ck −0.5

tsu(NWAIT_NE)

FMC_NWAIT valid before FMC_NEx high

4Tfmc_ker_ck +11

th(NE_NWAIT)

FMC_NEx hold time after FMC_NWAIT invalid

3Tfmc_ker_ck+11.5

1. Guaranteed by characterization results.

2. NWAIT pulse width is equal to 1 AHB cycle.

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