| 전자부품 데이터시트 검색엔진 |
|
STM32H7 데이터시트(PDF) 178 Page - STMicroelectronics |
|
|
|||||||||||||||||||||||||||||
STM32H7 데이터시트(HTML) 178 Page - STMicroelectronics |
|
178 / 357 page ![]() Electrical characteristics (rev Y) STM32H742xI/G STM32H743xI/G 178/357 DS12110 Rev 10 6.3.24 Temperature and VBAT monitoring 2. Guaranteed by characterization. 3. Measured at VDDA = 3.3 V ± 10 mV. The V30 ADC conversion result is stored in the TS_CAL1 byte. Table 93. Temperature sensor calibration values Symbol Parameter Memory address TS_CAL1 Temperature sensor raw data acquired value at 30 °C, VDDA=3.3 V 0x1FF1 E820 -0x1FF1 E821 TS_CAL2 Temperature sensor raw data acquired value at 110 °C, VDDA=3.3 V 0x1FF1 E840 - 0x1FF1 E841 Table 94. VBAT monitoring characteristics Symbol Parameter Min Typ Max Unit R Resistor bridge for VBAT -26 - KΩ Q Ratio on VBAT measurement - 4 - - Er(1) 1. Guaranteed by design. Error on Q –10 - +10 % tS_vbat(1) ADC sampling time when reading VBAT input 9 - - µs VBAThigh High supply monitoring - 3.55 - V VBATlow Low supply monitoring - 1.36 - Table 95. VBAT charging characteristics Symbol Parameter Condition Min Typ Max Unit RBC Battery charging resistor VBRS in PWR_CR3= 0 - 5 - KΩ VBRS in PWR_CR3= 1 - 1.5 - Table 96. Temperature monitoring characteristics Symbol Parameter Min Typ Max Unit TEMPhigh High temperature monitoring - 117 - °C TEMPlow Low temperature monitoring - –25 - |
|
링크 URL |
| ALLDATASHEET 가 귀하에 도움이 되셨나요? [ DONATE ] |
Alldatasheet는? | 광고문의 | 운영자에게 연락하기 | 개인정보취급방침 | 링크 투 데이터시트 | 링크교환 | 제조사별 검색 All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |