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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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STM32H7 데이터시트(PDF) 183 Page - STMicroelectronics |
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STM32H7 데이터시트(HTML) 183 Page - STMicroelectronics |
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183 / 357 page  DS12110 Rev 10 183/357 STM32H742xI/G STM32H743xI/G Electrical characteristics (rev Y) 320 en Voltage noise density at 1 KHz output loaded with 4 kΩ -140 - nV/√ Hz at 10 KHz -55 - IDDA(OPAMP) OPAMP consumption from VDDA Normal mode no Load, quiescent mode, follower - 570 1000 µA High- speed mode - 610 1200 1. Guaranteed by design, unless otherwise specified. 2. RLOAD is the resistive load connected to VSSA or to VDDA. 3. R2 is the internal resistance between the OPAMP output and th OPAMP inverting input. R1 is the internal resistance between the OPAMP inverting input and ground. PGA gain = 1 + R2/R1. Table 99. OPAMP characteristics(1) (continued) Symbol Parameter Conditions Min Typ Max Unit |
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