| 전자부품 데이터시트 검색엔진 |
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STM32H7 데이터시트(PDF) 236 Page - STMicroelectronics |
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STM32H7 데이터시트(HTML) 236 Page - STMicroelectronics |
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236 / 357 page ![]() Electrical characteristics (rev V) STM32H742xI/G STM32H743xI/G 236/357 DS12110 Rev 10 Low-speed internal (LSI) RC oscillator DVDD (CSI) CSI oscillator frequency drift over VDD VDD = 1.62 to 3.6 V - − 0.06 0.06 % tsu(CSI) CSI oscillator startup time - - 1 2 µs tstab(CSI) CSI oscillator stabilization time (to reach ±3% of fCSI) - - - 4 cycle IDD(CSI) CSI oscillator power consumption - - 23 30 µA 1. Guaranteed by design. 2. Guaranteed by test in production. 3. Guaranteed by characterization. Table 145. CSI oscillator characteristics(1) (continued) Symbol Parameter Conditions Min Typ Max Unit Table 146. LSI oscillator characteristics Symbol Parameter Conditions Min Typ Max Unit fLSI LSI frequency VDD = 3.3 V, TJ = 25 °C 31.4(1) 1. Guaranteed by test in production. 32 32.6(1) kHz TJ = –40 to 110 °C, VDD = 1.62 to 3.6 V 29.76(2) 2. Guaranteed by characterization results. - 33.6(2) TJ = –40 to 125 °C, VDD = 1.62 to 3.6 V 29.4 - 33.6 tsu(LSI)(3) 3. Guaranteed by design. LSI oscillator startup time - - 80 130 µs tstab(LSI)(3) LSI oscillator stabilization time (5% of final value) - - 120 170 IDD(LSI)(3) LSI oscillator power consumption - - 130 280 nA |
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