CST12.0MTWA datasheet(122/153 Pages) STMICROELECTRONICS

122 / 153 page

ST72334J/N, ST72314J/N, ST72124J

122/153

16.6 MEMORY CHARACTERISTICS

16.6.1 RAM and Hardware Registers

16.6.2 EEPROM Data Memory

16.6.3 FLASH Program Memory

Notes:

1. Minimum VDD supply voltage without losing data stored in RAM (in HALT mode or under RESET) or in hardware reg-

isters (only in HALT mode). Guaranteed by construction, not tested in production.

2. Data based on characterization results, tested in production at TA=25°C.

3. Up to 16 bytes can be programmed at a time for a 4kBytes FLASH block (then up to 32 bytes at a time for an 8k device)

4. The data retention time increases when the TA decreases.

5. Data based on reliability test results and monitored in production.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VRM

Data retention mode 1)

HALT mode (or RESET)

1.6

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

tprog

Programming time for 1~16 bytes 3)

-40°C

≤T

A≤+85°C

-40°C

≤T

A≤+125°C

tret

Data retention 5)

TA=+55°C

Years

NRW

Write erase cycles 5)

TA=+25°C

300 000

Cycles

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

TA(prog)

Programming temperature range 2)

025

°C

tprog

Programming time for 1~16 bytes 3) TA=+25°C

Programming time for 4 or 8kBytes

TA=+25°C

2.1

6.4

sec

tret

Data retention 5)

TA=+55°C

years

NRW

Write erase cycles 5)

TA=+25°C

100

cycles

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