CST12.0MTWA datasheet(128/153 Pages) STMICROELECTRONICS

128 / 153 page

ST72334J/N, ST72314J/N, ST72124J

128/153

16.8 I/O PORT PIN CHARACTERISTICS

16.8.1 General Characteristics

Subject to general operating conditions for VDD, fOSC, and TA unless otherwise specified.

Figure 82. Two typical Applications with unused I/O Pin

Figure 83. Typical IPU vs. VDD with VIN=VSS

Notes:

1. Unless otherwise specified, typical data are based on TA=25°C and VDD=5V.

2. Data based on characterization results, not tested in production.

3. Hysteresis voltage between Schmitt trigger switching levels. Based on characterization results, not tested.

4. Configuration not recommended, all unused pins must be kept at a fixed voltage: using the output mode of the I/O for

example or an external pull-up or pull-down resistor (see Figure 82). Data based on design simulation and/or technology

characteristics, not tested in production.

5. The RPU pull-up equivalent resistor is based on a resistive transistor (corresponding IPU current characteristics de-

scribed in Figure 83). This data is based on characterization results, tested in production at VDD max.

6. Data based on characterization results, not tested in production.

7. To generate an external interrupt, a minimum pulse width has to be applied on an I/O port pin configured as an external

interrupt source.

Symbol

Parameter

Conditions

Min

Typ 1)

Max

Unit

VIL

Input low level voltage 2)

0.3xVDD

VIH

Input high level voltage 2)

0.7xVDD

Vhys

Schmitt trigger voltage hysteresis 3)

400

Input leakage current

VSS≤VIN≤VDD

±1

µA

Static current consumption 4)

Floating input mode

200

RPU

Weak pull-up equivalent resistor 5)

VIN=VSS

VDD=5V

120

250

Ω

VDD=3.3V

170

200

300

CIO

I/O pin capacitance

tf(IO)out

Output high to low level fall time 6)

CL=50pF

Between 10% and 90%

tr(IO)out

Output low to high level rise time 6)

tw(IT)in

External interrupt pulse time 7)

1tCPU

10k

Ω

UNUSED I/O PORT

ST72XXX

10k

Ω

UNUSED I/O PORT

ST72XXX

VDD

3.2

3.5

4.5

5.5

Vdd [V]

Ipu [µA]

Ta=-40°C

Ta=25°C

Ta=85°C

Ta=125°C

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