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M750000007 데이터시트(PDF) 125 Page - SPANSION

부품명 M750000007
상세설명  128 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory
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February 6, 2004
Am75PDL191BHHa/Am75PDL193BHHa
123
ADV ANCE
I N FO RMAT I O N
TIMING DIAGRAMS
Notes: Write Cycle
1. A write occurs during the overlap (t
WP) of low CS#1s and low WE#. A write begins when CS#1s goes low and WE# goes low
with asserting UB# or LB# for single byte operation or simultaneously asserting UB# and LB# for double byte operation. A
write ends at the earliest transition when CS#1s goes high and WE# goes high. The t
WP is measured from the beginning of
write to the end of write.
2. t
CW is measured from the CS#1s going low to the end of write.
3. t
AS is measured from the address valid to the beginning of write.
4. t
WR is measured from the end of write to the address change. tWR is applied in case a write ends with CS#1s or WE# going high.
Notes: Deep Power Down Mode
1. When you toggle CS2s pin low, the device gets into the Deep Power Down mode after 0.5 ms suspend period.
2. To return to normal operation, the device needs Wake-up period.
3. Wake Up sequence is just the same as Power Up sequence.
Figure 31.
Timing Waveform of Write Cycle 3
Address
Data Valid
UB#, LB#
WE#
Data in
Data out
High-Z
High-Z
tWC
tCW(2)
tBW
tWP(1)
tDH
tDW
tWR(4)
tAW
tAS(3)
CS#1s
Address
Data Valid
UB#, LB#
WE#
Data in
Data out
High-Z
High-Z
tWC
tCW(2)
tBW
tWP(1)
tDH
tDW
tWR(4)
tAW
tAS(3)
CS#1s



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