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M750000009 데이터시트(PDF) 124 Page - SPANSION

부품명 M750000009
상세설명  128 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory
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122
Am75PDL191CHH/Am75PDL193CHH
February 5, 2004
ADV ANCE
I N FO RMAT I O N
DC Characteristics (Ta = -25
oC to 85oC, VDD = 2.6 to 3.3 V)
Notes:
1.
IDDO depends on the cycle time.
2.
IDDO depends on output loading. Specified values are defined with
the output open condition.
Capacitance (Ta = -25
oC, f = 1 MHz)
Note:
1.
This parameter is sampled periodically and is not 100% tested.
2.
AC measurements are assumed t
R, tF = 5 ns.
3.
Parameters tOD, tODO, tBD and tODW define the time at which the
output goes the open condition and are not output voltage
reference levels.
4.
Data cannot be retained at deep power-down standby mode.
5.
If OE# is high during the write cycle, the outputs will remain at
high impedance.
6.
During the output state of I/O signals, input signals of reverse
polarity must not be applied.
7.
If CE1# or LB#/UB# goes LOW coincident with or after WE# goes
LOW, the outputs will remain at high impedance.
8.
If CE1 or LB#/UB# goes HIGH coincident with or before WE#
goes HIGH, the outputs will remain at high impedance.
Symbol
Parameter
Test Condition
Min
Typ
Max
Unit
I
IL
Input Leakage Current
V
IN = 0 V to VDD
-1.0
-
+1.0
µA
I
LO
Output Leakage Current
Output disable, V
OUT = 0 V to VDD
-1.0
-
+1.0
µA
V
OH
Output High Voltage
I
OH = -0.5 mA
2.4
-
V
V
OL
Output Low Voltage
I
OL = -1.0 mA
-
-
0.4
V
I
DDO1
Operating Current
CE1# = V
IL
CE2 = V
IH, IOUT = 0 mA
t
RC = min
-
-50
mA
I
DDO2
Page Access Operating Current
CE1# = V
IL, CE2 = VIH,
Page add. cycling
, IOUT = 0 mA
t
PC = min
--
25
mA
I
DDS
Standby Current (MOS)
CE1# = V
DD - 0.2V, CE2 = VDD - 0.2V
-
-
100
µA
I
DDSD
Deep Power-down Standby Current
CE2 = 0.2V
-
-
5
µA
Symbol
Parameter
Test Condition
Max
Unit
C
IN
Input Capitance
V
IN = GND
10
pF
C
OUT
Output Capitance
V
OUT = GND
10
pF



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