MGFS45V2123

MITSUBISHI SEMICONDUCTOR <GaAs FET>

2.1~2.3GHz BAND 30W INTERNALLY MATCHD GaAs FET

DESCRIPTION

The MGFS45V2123 is an internally impedance matched

GaAs power FET especially designed for use in 2.1~2.3

GHz band amplifiers. The hermetically sealed metal-ceramic

package guarantees high reliability.

ABSOLUTE MAXIMUM RATINGS (Ta=25°C)

ELECTRICAL CHARACTERISTICS (Ta=25°C)

MITSUBISHI

ELECTRIC

%

*1 : item -51, 2 tone test, Po=34.5dBm Single Carrier Level, f=2.1, 2.2, 2.3GHz,

∆f=5MHz

*2 : Channel to case

Symbol

Parameter

Test conditions

Min.

Typ.

Max

Unit

Saturated drain current

V

Output power at 1dB gain

compression

45

dBm

Linear power gain

12

—

dB

Drain current

7.5

A

ηadd

Power added efficiency

45

IM3

3rd order IM distortion

1.7

dBc

Rth (ch-c)

Thermal resistance

—

°C/W

Forward gate current

76

mA

Parameter

Ratings

Unit

Gate to drain voltage

-15

V

-15

Gate to source voltage

22

Drain current

-61

A

Channel temperature

-65 ~ +175

°C

°C

item 01 : 2.1~2.3GHz band power amplifier

item 51 : 2.1~2.3GHz band digital radio communication

APPLICATION

*2

ID

VGS (off)

-45

11

-5

—

Limits

Storage temperature

Total power dissipation

Symbol

Tch

Tstg

Reverse gate current

175

88

W

mA

V

*1 : Tc=25°C

*1

—

—

—

—

-42

44

—

—

—

—

OUTLINE DRAWING

Until : millimeters (inches)

GF-38

(1) GATE

(2) Source (FLANGE)

(3) DRAIN

< Keep safety first in your circuit designs! >

Mitsubishi Electric Corporation puts the maximum effort into

making semiconductor products better and more reliable,

but there is always the possibility that trouble may occur

with them.Trouble with semiconductors may lead to personal

injury, fire or property damage. Remember to give due

consideration to safety when making your circuit designs,

with appropriate measures such as (i)placement of

substitutive, auxiliary circuits, (ii)use of non-flammable

material or (iii)prevention against any malfunction or mishap.

Class A operation

FEATURES

High power gain

High power added efficiency

ηadd=45% (TYP.) @f=2.1~2.3GHz

Loe distortion [item -51]

IM3= -45dBc (TYP.) @Po=34.5dBm S.C.L.

High output power

Internally matched to 50 (

Ω) system

QUALITY GRADE

IG

RECOMMENDED BIAS CONDITIONS

RG=25

Ω

*1

20.4±0.2 (0.803±0.008)

16.7 (0.658)

0.6±0.15

(0.024±0.006)

24±0.3 (0.945±0.012)

R1.2