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전자부품 데이터시트 검색엔진 |
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IRLR3715PBF 데이터시트(PDF) 1 Page - International Rectifier |
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IRLR3715PBF 데이터시트(HTML) 1 Page - International Rectifier |
1 / 10 page ![]() Symbol Parameter Max. Units VDS Drain-Source Voltage 20 V VGS Gate-to-Source Voltage ± 20 V ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 54 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 38 A IDM Pulsed Drain Current 210 PD @TC = 25°C Maximum Power Dissipation 71 W PD @TA = 25°C Maximum Power Dissipation 3.8 W Linear Derating Factor 0.48 W/°C TJ , TSTG Junction and Storage Temperature Range -55 to + 175 °C www.irf.com 1 12/6/04 IRLR3715PbF IRLU3715PbF SMPS MOSFET HEXFET® Power MOSFET Notes through
are on page 10 Absolute Maximum Ratings Thermal Resistance Parameter Typ. Max. Units RθJC Junction-to-Case ––– 2.1 RθJA Junction-to-Ambient ––– 110 °C/W RθJA Junction-to-Ambient (PCB mount) ––– 50 Applications Benefits l Ultra-Low Gate Impedance l Very Low RDS(on) at 4.5V VGS l Fully Characterized Avalanche Voltage and Current l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Computer Processor Power VDSS RDS(on) max ID 20V 14m Ω 54A D-Pak I-Pak IRLR3715 IRLU3715 PD - 95555A l Lead-Free |
유사한 부품 번호 - IRLR3715PBF |
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유사한 설명 - IRLR3715PBF |
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