Silicon Medium Barrier

Schottky Diodes

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3

V6

MA4E1339 Series

Also Offering

RoHS Compliant

Equivalent Parts

Maximum Ratings 25 °C (unless otherwise specified)

*

* Exceeding these limits may cause permanent damage.

** Please refer to Application Note M538 for surface mounting instructions.

Parameter

Values

Operating Temperature

-55 to +125

Storage Temperature

-55 to +125

Total Power Dissipation (RF and D.C.)

250

Continuous Forward Current

30

Surge Forward Current, @ t<10 millisec

100

Soldering Temperature (Standard Part #)

+235 for 5 sec.**

Unit

°C

°C

mW

mA

mA

°C

Soldering Temperature (RoHS Compliant Part #)

°C

+260 for 5 sec.**

Reverse Voltage

V

20

Parameter

Condition

Symbol

Specification

Forward Voltage

410 mV max.

Delta Forward Current

20 mV max.

For series pair and unconnected

pair configurations

Forward Voltage

1.0 V max.

Total Capacitance

F = 1 MHz

1.2 pF max.

Reverse Leakage Current

200 nA max.

Reverse Voltage Breakdown

20 V min.