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DSPIC30F6015T-30E/PT 데이터시트(PDF) 51 Page - Microchip Technology |
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DSPIC30F6015T-30E/PT 데이터시트(HTML) 51 Page - Microchip Technology |
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51 / 236 page  © 2007 Microchip Technology Inc. DS70150C-page 49 dsPIC30F6010A/6015 6.6 Programming Operations A complete programming sequence is necessary for programming or erasing the internal Flash in RTSP mode. A programming operation is nominally 2 msec in duration and the processor stalls (waits) until the oper- ation is finished. Setting the WR bit (NVMCON<15>) starts the operation, and the WR bit is automatically cleared when the operation is finished. 6.6.1 PROGRAMMING ALGORITHM FOR PROGRAM FLASH The user can erase or program one row of program Flash memory at a time. The general process is: 1. Read one row of program Flash (32 instruction words) and store into data RAM as a data “image”. 2. Update the data image with the desired new data. 3. Erase program Flash row. a) Set up NVMCON register for multi-word, program Flash, erase, and set WREN bit. b) Write address of row to be erased into NVMADRU/NVMDR. c) Write ‘55’ to NVMKEY. d) Write ‘AA’ to NVMKEY. e) Set the WR bit. This will begin erase cycle. f) CPU will stall for the duration of the erase cycle. g) The WR bit is cleared when erase cycle ends. 4. Write 32 instruction words of data from data RAM “image” into the program Flash write latches. 5. Program 32 instruction words into program Flash. a) Set up NVMCON register for multi-word, program Flash, program, and set WREN bit. b) Write ‘55’ to NVMKEY. c) Write ‘AA’ to NVMKEY. d) Set the WR bit. This will begin program cycle. e) CPU will stall for duration of the program cycle. f) The WR bit is cleared by the hardware when program cycle ends. 6. Repeat steps 1 through 5 as needed to program desired amount of program Flash memory. 6.6.2 ERASING A ROW OF PROGRAM MEMORY Example 6-1 shows a code sequence that can be used to erase a row (32 instructions) of program memory. EXAMPLE 6-1: ERASING A ROW OF PROGRAM MEMORY ; Setup NVMCON for erase operation, multi word write ; program memory selected, and writes enabled MOV #0x4041,W0 ; MOV W0,NVMCON ; Init NVMCON SFR ; Init pointer to row to be ERASED MOV #tblpage(PROG_ADDR),W0 ; MOV W0,NVMADRU ; Initialize PM Page Boundary SFR MOV #tbloffset(PROG_ADDR),W0 ; Intialize in-page EA[15:0] pointer MOV W0, NVMADR ; Intialize NVMADR SFR DISI #5 ; Block all interrupts with priority <7 ; for next 5 instructions MOV #0x55,W0 MOV W0,NVMKEY ; Write the 0x55 key MOV #0xAA,W1 ; MOV W1,NVMKEY ; Write the 0xAA key BSET NVMCON,#WR ; Start the erase sequence NOP ; Insert two NOPs after the erase NOP ; command is asserted |
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