PIC16F883-ESLASHSOSQTP datasheet(241/288 Pages) MICROCHIP

241 / 288 page

Preliminary

DS41291D-page 239

PIC16F882/883/884/886/887

17.0

ELECTRICAL SPECIFICATIONS

Absolute Maximum Ratings(†)

Ambient temperature under bias..........................................................................................................-40° to +125°C

Storage temperature ........................................................................................................................ -65°C to +150°C

Voltage on VDD with respect to VSS ................................................................................................... -0.3V to +6.5V

Voltage on MCLR with respect to Vss ............................................................................................... -0.3V to +13.5V

Voltage on all other pins with respect to VSS ........................................................................... -0.3V to (VDD + 0.3V)

Total power dissipation(1) ............................................................................................................................... 800 mW

Maximum current out of VSS pin .................................................................................................................... 300 mA

Maximum current into VDD pin ....................................................................................................................... 250 mA

Input clamp current, IIK (VI < 0 or VI > VDD)

...............................................................................................................± 20 mA

Output clamp current, IOK (Vo < 0 or Vo >VDD)

.........................................................................................................± 20 mA

Maximum output current sunk by any I/O pin.................................................................................................... 25 mA

Maximum output current sourced by any I/O pin .............................................................................................. 25 mA

Maximum current sunk by PORTA, PORTB and PORTE (combined)(2)........................................................ 200 mA

Maximum current sourced by PORTA, PORTB and PORTE (combined)(2) .................................................. 200 mA

Maximum current sunk by PORTC and PORTD (combined)(2) ..................................................................... 200 mA

Maximum current sourced by PORTC and PORTD (combined)(2) ................................................................ 200 mA

Note 1:

Power dissipation is calculated as follows: PDIS = VDD x {IDD –

∑ IOH} + ∑ {(VDD – VOH) x IOH} + ∑(VOl x IOL).

PORTD and PORTE are implemented on PIC16F886/PIC16F887 only.

† NOTICE: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the

device. This is a stress rating only and functional operation of the device at those or any other conditions above those

indicated in the operation listings of this specification is not implied. Exposure above maximum rating conditions for

extended periods may affect device reliability.

PIC16F883-E/SOSQTP 데이터시트(PDF) 241 Page - Microchip Technology

PIC16F883-E/SOSQTP 데이터시트(HTML) 241 Page - Microchip Technology

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 87 88 89 90 91 92 93 94 95 96 97 98 99 100 ...More

데이터시트 다운로드

링크 URL