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PIC16F883-E/SOSQTP 데이터시트(PDF) 252 Page - Microchip Technology

부품명 PIC16F883-E/SOSQTP
상세설명  28/40/44-Pin, Enhanced Flash-Based 8-Bit CMOS Microcontrollers with nanoWatt Technology
PDF  288 Pages
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제조업체  MICROCHIP [Microchip Technology]
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PIC16F882/883/884/886/887
DS41291D-page 250
Preliminary
© 2007 Microchip Technology Inc.
TABLE 17-2:
OSCILLATOR PARAMETERS
Standard Operating Conditions (unless otherwise stated)
Operating Temperature
-40°C
≤ TA ≤ +125°C
Param
No.
Sym
Characteristic
Freq
Tolerance
Min
Typ†
Max
Units
Conditions
OS06
TWARM
Internal Oscillator Switch
when running(3)
——
—
2
TOSC
Slowest clock
OS07
TSC
Fail-Safe Sample Clock
Period(1)
—
—21
—
ms
LFINTOSC/64
OS08
HFOSC
Internal Calibrated
HFINTOSC Frequency(2)
±1%
7.92
8.0
8.08
MHz
VDD = 3.5V, 25°C
±2%
7.84
8.0
8.16
MHz
2.5V
≤ VDD ≤ 5.5V,
0°C
≤ TA ≤ +85°C
±5%
7.60
8.0
8.40
MHz
2.0V
≤ VDD ≤ 5.5V,
-40°C
≤ TA ≤ +85°C (Ind.),
-40°C
≤ TA ≤ +125°C (Ext.)
OS09*
LFOSC
Internal Uncalibrated
LFINTOSC Frequency
—
153145
kHz
OS10*
TIOSC
ST
HFINTOSC Oscillator
Wake-up from Sleep
Start-up Time
—
5.5
12
24
μsVDD = 2.0V, -40°C to +85°C
—3.5
7
14
μsVDD = 3.0V, -40°C to +85°C
—3
6
11
μsVDD = 5.0V, -40°C to +85°C
*
These parameters are characterized but not tested.
†
Data in “Typ” column is at 5.0V, 25°C unless otherwise stated. These parameters are for design guidance only
and are not tested.
Note 1:
Instruction cycle period (TCY) equals four times the input oscillator time base period. All specified values are
based on characterization data for that particular oscillator type under standard operating conditions with the
device executing code. Exceeding these specified limits may result in an unstable oscillator operation and/or
higher than expected current consumption. All devices are tested to operate at “min” values with an external
clock applied to the OSC1 pin. When an external clock input is used, the “max” cycle time limit is “DC” (no clock)
for all devices.
2:
To ensure these oscillator frequency tolerances, VDD and VSS must be capacitively decoupled as close to the
device as possible. 0.1
μF and 0.01 μF values in parallel are recommended.
3:
By design.



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