2N3500 datasheet(2/2 Pages) SEMICOA

부품명	2N3500

상세설명	Silicon NPN Transistor

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제조업체	SEMICOA [Semicoa Semiconductor]

홈페이지	http://www.semicoa.com/

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2N3500

Silicon NPN Transistor

Dat a Sheet

Copyright

Semicoa

Rev. H.2

333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541

Page 2 of 2

www.SEMICOA.com

ELECTRICAL CHARACTERISTICS

characteristics specified at TA = 25°C

Off Characteristics

Parameter

Symbol

Test Conditions

Min

Typ

Max

Units

Collector-Emitter Breakdown Voltage

V(BR)CEO

IC = 10 mA

150

Volts

Collector-Base Cutoff Current

ICBO1

ICBO2

ICBO3

VCB = 150 Volts

VCB = 75 Volts

VCB = 75 Volts, TA = 150°C

10

50

µA

nA

µA

Collector-Emitter Cutoff Current

ICEO

VCE = 120 Volts

1

µA

Emitter-Base Cutoff Current

IEBO1

IEBO2

VEB = 6 Volts

VEB = 4 Volts

10

25

µA

nA

On Characteristics

Pulse Test: Pulse Width = 300

µs, Duty Cycle ≤ 2.0%

Parameter

Symbol

Test Conditions

Min

Typ

Max

Units

DC Current Gain

hFE1

hFE2

hFE3

hFE4

hFE5

hFE7

IC = 0.1 mA, VCE = 10 Volts

IC = 1.0 mA, VCE = 10 Volts

IC = 10 mA, VCE = 10 Volts

IC = 150 mA, VCE = 10 Volts

IC = 300 mA, VCE = 10 Volts

IC = 150 mA, VCE = 10 Volts

TA = -55°C

20

25

35

40

15

22

120

Base-Emitter Saturation Voltage

VBEsat1

VBEsat2

IC = 10 mA, IB = 1 mA

IC = 150 mA, IB = 15 mA

0.8

1.2

Volts

Collector-Emitter Saturation Voltage

VCEsat1

VCEsat2

IC = 10 mA, IB = 1 mA

IC = 150 mA, IB = 15 mA

0.2

0.4

Volts

Dynamic Characteristics

Parameter

Symbol

Test Conditions

Min

Typ

Max

Units

Magnitude – Common Emitter, Short

Circuit Forward Current Transfer Ratio

|hFE|

VCE = 20 Volts, IC = 20 mA,

f = 100 MHz

1.5

8

Small Signal Short Circuit Forward

Current Transfer Ratio

hFE

VCE = 10 Volts, IC = 10 mA,

f = 1 kHz

35

300

Open Circuit Output Capacitance

COBO

VCB = 10 Volts, IE = 0 mA,

100 kHZ < f < 1 MHz

8

pF

Open Circuit Input Capacitance

CIBO

VEB = 0.5 Volts, IC = 0 mA,

100 kHZ < f < 1 MHz

80

pF

Noise Figure

NF1

NF2

VCE = 10 Volts, IC = 0.5 mA,

f = 1 kHz, Rg = 1 kΩ

VCE = 10 Volts, IC = 0.5 mA,

f = 10 kHz, Rg = 1 kΩ

16

6

dB

Switching Characteristics

Saturated Turn-On Time

tON

VEB = 5 Volts, IC = 150 mA,

IB1 = 15 mA

115

ns

Saturated Turn-Off Time

tOFF

IC = 150 mA, IB1=IB2=15 mA

1,150

ns

유사한 부품 번호 - 2N3500

제조업체	부품명	데이터시트	상세설명
Semicoa Semiconductor	2N3500	32Kb / 1P	Chip Type 2C3501 Geometry 5620 Polarity NPN
Semicoa Semiconductor	2N3500	45Kb / 2P	Type 2N3500 Geometry 5620 Polarity NPN
Boca Semiconductor Corp...	2N3500	169Kb / 5P	GENERAL PURPOSE TRANSISTOR (NPN SILICON)
Microsemi Corporation	2N3500	69Kb / 2P	NPN SILICON TRANSISTOR
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