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TMP86FS49BUG 데이터시트(PDF) 287 Page - Toshiba Semiconductor |
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TMP86FS49BUG 데이터시트(HTML) 287 Page - Toshiba Semiconductor |
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287 / 294 page ![]() Page 271 TMP86FS49BUG Note 8: The circuit of a power supply must be designed such as to enable the supply of a peak current. This peak current causes the supply voltage in the device to fluctuate. Connect a bypass capacitor of about 0.1 µF near the power supply of the device to stabilize its operation. Note 9: VIN is supply volage to the terminals except for TEST pin. VTEST: is supply voltage for TEST pin. Note 10:To execute the Program, Erase and Security Program commands on the flash memory, the temperature must be kept within Topr = -10 to 40 degree celsius. If this temperature range is not observed, operation cannot be guaranteed. Figure 22-1 Intermittent Operation of Flash Memory Figure 22-2 Current When an Erase or Program is Being Performed on the Flash Memory n Program coutner (PC) n+1 n+2 n+3 1 machine cycle (4/fc or 4/fs) MCU current I [mA] DDP-P Typ. current Momentary flash current Max. current Sum of average momentary flash current and MCU current Internal write signal TBD, TSCE Last write cycle of each of the Byte Program, Security Program, Chip Erase and Sector Erase I [mA] DDEW Internal data bus Program counter (PC) 1 machine cycle |
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