1SV312

2007-11-01

1

TOSHIBA Diode Silicon Epitaxial Pin Type

1SV312

VHF~UHF Band RF Attenuator Applications

• Two independent diodes mounted onto a 4-pin ultra compact package

and it is suitable for high-density circuit design.

Characteristics

Symbol

Rating

Unit

Reverse voltage

50

V

Forward current

50

mA

Junction temperature

125

°C

Storage temperature range

−55~125

°C

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

Please design the appropriate reliability upon reviewing the

Toshiba Semiconductor Reliability Handbook (“Handling

Precautions”/“Derating Concept and Methods”) and individual

reliability data (i.e. reliability test report and estimated failure rate,

etc).

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Reverse voltage

50

⎯

⎯

V

Reverse current

⎯

⎯

0.1

μA

Forward voltage

⎯

0.95

1

V

Total capacitance

⎯

0.25

0.4

pF

Series resistance

⎯

3

⎯

Ω

Marking

Unit: mm

JEDEC

―

JEITA

―

TOSHIBA

1-2U1A

Weight: 0.006 g (typ.)