STM32F412RGT3PTR datasheet(138/201 Pages) STMICROELECTRONICS

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Electrical characteristics

STM32F412xE/G

138/201

DocID028087 Rev 7

QSPI interface characteristics

Unless otherwise specified, the parameters given in the following tables for QSPI are

derived from tests performed under the ambient temperature, fAHB frequency and VDD

supply voltage conditions summarized in Table 16, with the following configuration:

•

Output speed is set to OSPEEDRy[1:0] = 11

•

Capacitive load C=20pF

•

Measurement points are done at CMOS levels: 0.5VDD

Refer to Section 6.3.16: I/O port characteristics for more details on the input/output alternate

function characteristics.

Table 67. QSPI dynamic characteristics in SDR mode(1)

1. Guaranteed by characterization results, not tested in production.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

fSCK

1/tc(SCK)

QSPI clock

frequency

Write mode

1.71 V≤VDD≤3.6 V

Cload = 15 pF

MHz

Read mode

2.7 V<VDD<3.6 V

Cload = 15 pF

100

1.71 V≤VDD≤3.6 V

tw(CKH)

QSPI clock high

and low

(T(CK) / 2)-1

T(CK) / 2

tw(CKL)

T(CK) / 2)

(T(CK) / 2)+1

ts(IN)

Data input setup

time

-0.5

th(IN)

Data input hold

time

3.5

tv(OUT)

Data output valid

time

1.5

th(OUT)

Data output hold

time

-0.5

Table 68. QSPI dynamic characteristics in DDR mode(1)

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

fSCK

1/tc(SCK)

QSPI clock

frequency

Write mode

1.71 V≤VDD≤3.6 V

Cload = 15 pF

MHz

Read mode

2.7 V<VDD<3.6 V

Cload = 15 pF

1.71 V≤VDD≤3.6 V

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