STM32F412RGT6TR datasheet(118/201 Pages) STMICROELECTRONICS

118 / 201 page

Electrical characteristics

STM32F412xE/G

118/201

DocID028087 Rev 7

Table 51. Flash memory endurance and data retention

Vprog

Programming voltage

32-bit program operation

2.7

3.6

16-bit program operation

2.1

3.6

8-bit program operation

1.7

3.6

1. Guaranteed by characterization, not tested in production.

2. The maximum programming time is measured after 100K erase operations.

Table 50. Flash memory programming with VPP voltage

Symbol

Parameter

Conditions

Min(1)

Typ

Max(1)

1. Guaranteed by design, not tested in production.

Unit

tprog

Double word programming

TA = 0 to +40 °C

VDD = 3.3 V

VPP = 8.5 V

100(2)

2. The maximum programming time is measured after 100K erase operations.

µs

tERASE16KB Sector (16 KB) erase time

230

tERASE64KB Sector (64 KB) erase time

490

tERASE128KB Sector (128 KB) erase time

875

tME

Mass erase time

6.9

Vprog

Programming voltage

2.7

3.6

VPP

VPP voltage range

IPP

Minimum current sunk on

the VPP pin

-10

tVPP(3)

3. VPP should only be connected during programming/erasing.

Cumulative time during

which VPP is applied

hour

Symbol

Parameter

Conditions

Value

Unit

Min(1)

1. Guaranteed by characterization, not tested in production.

NEND

Endurance

TA = -40 to +85 °C (temp. range 6)

TA = -40 to +105 °C (temp. range 7)

TA = -40 to +125 °C (temp. range 3)

kcycles

tRET

Data retention

1 kcycle(2) at TA = 85 °C

2. Cycling performed over the whole temperature range.

Years

1 kcycle(2) at TA = 105 °C

1 kcycle(2) at TA = 125 °C

10 kcycle(2) at TA = 55 °C

Table 49. Flash memory programming (continued)

Symbol

Parameter

Conditions

Min(1)

Typ

Max(1) Unit

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