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STM32F429NET7 데이터시트(PDF) 148 Page - STMicroelectronics

부품명 STM32F429NET7
상세설명  ARM Cortex-M4 32b MCUFPU, 225DMIPS, up to 2MB Flash/2564KB RAM, USB OTG HS/FS, Ethernet, 17 TIMs, 3 ADCs, 20 comm. interfaces, camera & LCD-TFT
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STM32F429NET7 데이터시트(HTML) 148 Page - STMicroelectronics

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Electrical characteristics
STM32F427xx STM32F429xx
148/231
DocID024030 Rev 6
Figure 45. USB OTG full speed timings: definition of data signal rise and fall time
USB high speed (HS) characteristics
Unless otherwise specified, the parameters given in Table 70 for ULPI are derived from
tests performed under the ambient temperature, fHCLK frequency summarized in Table 69
and VDD supply voltage conditions summarized in Table 68, with the following configuration:
Output speed is set to OSPEEDRy[1:0] = 10, unless otherwise specified
Capacitive load C = 30 pF, unless otherwise specified
Measurement points are done at CMOS levels: 0.5VDD.
Refer to Section 6.3.17: I/O port characteristics for more details on the input/output
characteristics.
Table 67.
USB OTG full speed electrical characteristics(1)
1. Guaranteed by design.
Driver characteristics
Symbol
Parameter
Conditions
Min
Max
Unit
tr
Rise time(2)
2. Measured from 10% to 90% of the data signal. For more detailed informations, please refer to USB
Specification - Chapter 7 (version 2.0).
CL = 50 pF
420
ns
tf
Fall time(2)
CL = 50 pF
4
20
ns
trfm
Rise/ fall time matching
tr/tf
90
110
%
VCRS
Output signal crossover voltage
1.3
2.0
V
ZDRV
Output driver impedance(3)
3. No external termination series resistors are required on DP (D+) and DM (D-) pins since the matching
impedance is included in the embedded driver.
Driving high or
low
28
44
Ω
Table 68. USB HS DC electrical characteristics
Symbol
Parameter
Min.(1)
1. All the voltages are measured from the local ground potential.
Max.(1)
Unit
Input level
VDD
USB OTG HS operating voltage
1.7
3.6
V
ai14137
tf
Differen tial
Data L ines
VSS
VCRS
tr
Crossover
points



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