| 전자부품 데이터시트 검색엔진 |
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L9945 데이터시트(PDF) 121 Page - STMicroelectronics |
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L9945 데이터시트(HTML) 121 Page - STMicroelectronics |
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121 / 144 page ![]() Symbol Parameter Condition Min. Typ. Max. Unit tOC OC Detection filter time - 2 - 3 µs 6.3.6 Temperature compensation for OC threshold The device offers the possibility to compensate the OC threshold against temperature variations. Such feature can be enabled independently on each channel. The device is able to monitor the internal junction temperature Tj through on board Temperature ADC. Given the estimated temperature variation between the device junction and the external FET junction. Eq. (4): Estimated temperature variation for the compensation algorithm ΔT=TjFET−Tj (4) An internal algorithm measures Tj and is able to compensate VOC against RDSon variations induced by TjFET. The latter can be estimated according to the given application and operating scenario. Temperature compensation can be enabled by programming the OC_Temp_comp_xx bit according to the following table: Table 42. Temperature compensation OC_Temp_comp_xx Function 00 Temperature compensation deactivated 01 Temperature compensation active for estimated ∆T < 60 °C. TCF is saturated at '1' for Tj ≥ Tj_SAT = 83 °C. 10 Temperature compensation active for estimated ∆T < 40 °C. TCF is saturated at '1' for Tj ≥ Tj_SAT = 96 °C. 11 Temperature compensation active for estimated ∆T < 25 °C. TCF is saturated at '1' for Tj ≥ Tj_SAT = 108 °C. In case temperature compensation is enabled, the overcurrent threshold must be programmed according to Eq. (3), where ROC is the RDSon of the external FET evaluated for TjFET = 150 °C. The internal algorithm compensates the OC threshold based on a multiplicative factor: Eq. (5): Temperature Compensation Factor (TCF) VOC_comp=TCF×VOC (5) TCF = 1 when Tj ≥ Tj_SAT, and it's decremented with a constant slope of 0.38 %/°C for Tj < Tj_SAT. L9945 Safety & diagnostics DS12275 - Rev 10 page 121/144 |
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