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RZ/N2L 데이터시트(PDF) 118 Page - Renesas Technology Corp |
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RZ/N2L 데이터시트(HTML) 118 Page - Renesas Technology Corp |
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118 / 128 page ![]() 50 pF Observation point 50 pF USB_DP USB_DM Figure 2.106 Measurement circuit (full speed) Table 2.47 On-chip USB high-speed characteristics Parameter Symbol Min. Typ. Max. Unit Reference figure Rising time tHSR — — 2.133 V/µs Figure 2.107, Figure 2.108 Falling time tHSF — — 2.133 V/µs Output resistors (also used as high-speed terminating resistor) ZHSDRV 40.5 — 49.5 Ω — Note: The output resistors (ZHSDRV) for connection to the USB_DP and USB_DM pins are within the LSI. USB_DP, USB_DM 10% 90% 90% 10% tHSR tHSF Figure 2.107 USB_DP, USB_DM output timing (high speed) 45 kΩ Observation point 45 kΩ USB_DP USB_DM Figure 2.108 Measurement circuit (high speed) RZ/N2L Datasheet 2. Electrical Characteristics R01DS0397EJ0140 Rev.1.40 Mar 31, 2026 Page 118 of 128 |
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