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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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ST72311R 데이터시트(PDF) 139 Page - STMicroelectronics |
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ST72311R 데이터시트(HTML) 139 Page - STMicroelectronics |
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139 / 164 page  ST72311R, ST72511R, ST72512R, ST72532R 139/164 12.6 MEMORY CHARACTERISTICS Subject to general operating condition for VDD,fOSC, and TA unless otherwise specified. 12.6.1 RAM and Hardware Registers 12.6.2 EEPROM Data Memory 12.6.3 EPROM Program Memory Notes: 1. Minimum VDD supply voltage without losing data stored into RAM (in in HALT mode or under RESET) or into hardware registers (only in HALT mode). Guaranteed by construction, not tested in production. 2. The data retention time increase when the TA decreases. 3. Data based on reliability test results and monitored in production. 4. Data given only as guidelines. Symbol Parameter Conditi ons Min Typ Max Unit VRM Data retention mode 1) HALT mode (or RESET) 1.6 V Symbol Parameter Conditi ons Min Typ Max Unit tprog Programming time (for 1 up to 16 bytes at a time) -40 °C≤T A≤+85°C10 ms -40 °C≤T A≤+125°C15 tret Data retention 3) TA=+55°C 2) 20 Years NRW Write erase cycles 3) TA=+25°C 300 000 Cycles Symbol Parameter Conditions Min Typ Max Unit WERASE UV lamp Lamp wavelength 2537Å 15 Watt.sec /cm2 terase Erase Time 4) UV lamp is placed 1 inch from the device window without any interposed filters 15 20 min tret Data retention 3) TA=+55°C 2) 20 years |
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