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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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ST7263B 데이터시트(PDF) 103 Page - STMicroelectronics |
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ST7263B 데이터시트(HTML) 103 Page - STMicroelectronics |
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103 / 132 page  ST7263B 103/132 13.6 MEMORY CHARACTERISTICS Subject to general operating conditions for fCPU, and TA unless otherwise specified. 13.6.1 RAM and Hardware Registers Note 1: Guaranteed by design. Not tested in production. 13.6.2 Flash Memory Operating Conditions: fCPU = 8 MHz. Figure 52. Two typical Applications with VPP Pin 1) Note 1: When the ICP mode is not required by the application, VPP pin must be tied to VSS. Symbol Parameter Conditions Min Typ Max Unit VRM Data retention mode 1) HALT mode (or RESET) 2.0 V DUAL VOLTAGE FLASH MEMORY Symbol Parameter Conditions Min Typ Max Unit fCPU Operating Frequency Read mode 8 MHz Write / Erase mode, TA=25°C 8 VPP Programming Voltage 4.0V ≤V DD ≤ 5.5V 11.4 12.6 V IPP VPP Current Write / Erase 30 mA tPROG Byte Programming Time TA=25°C 330 µs Block Programming Time (16KB) 0.8 s tERASE Sector Erasing Time (sector 0 ; 4KB) 2 Sector Erasing Time (sector 1 ; 4KB) 2 Sector Erasing Time (sector 2 ; 8KB) 2.5 tVPP Internal VPP Stabilization Time 10 µs tRET Data Retention TA ≤ 55°C 20 years NRW Write Erase Cycles TA=25°C 100 cycles VPP ST72XXX 10k Ω PROGRAMMING TOOL VPP ST72XXX |
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