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ST7LITE1XB 데이터시트(PDF) 126 Page - STMicroelectronics

부품명 ST7LITE1XB
상세설명  8-BIT MCU WITH SINGLE VOLTAGE FLASH MEMORY, DATA EEPROM, ADC, 5 TIMERS, SPI
PDF  159 Pages
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제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

ST7LITE1XB 데이터시트(HTML) 126 Page - STMicroelectronics

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13.6 MEMORY CHARACTERISTICS
TA = -40°C to 125°C, unless otherwise specified
13.6.1 RAM and Hardware Registers
13.6.2 FLASH Program Memory
13.6.3 EEPROM Data Memory
Notes:
1. Minimum VDD supply voltage without losing data stored in RAM (in HALT mode or under RESET) or in hardware reg-
isters (only in HALT mode). Guaranteed by construction, not tested in production.
2. Up to 32 bytes can be programmed at a time.
3. The data retention time increases when the TA decreases.
4. Data based on reliability test results and monitored in production.
5. Data based on characterization results, not tested in production.
6. Guaranteed by Design. Not tested in production.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VRM
Data retention mode 1)
HALT mode (or RESET)
1.6
V
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VDD
Operating voltage for Flash write/erase
Refer to operating range of
VDD with TA, section 13.3.1
on page 112
2.7
5.5
V
tprog
Programming time for 1~32 bytes 2)
TA=−40 to +125°C
5
10
ms
Programming time for 1.5 kBytes
TA=+25°C
0.24
0.48
s
tRET
Data retention 4)
TA=+55°C
3)
20
years
NRW
Write erase cycles
TA=+25°C
10K
cycles
IDD
Supply current 6)
Read / Write / Erase modes
fCPU = 8MHz, VDD = 5.5V
2.6
mA
No Read/No Write Mode
100
μA
Power down mode / HALT
0
0.1
μA
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VDD
Operating voltage for EEPROM
write/erase
Refer to operating range of VDD with
TA, section 13.3.1 on page 112
2.7
5.5
V
tprog
Programming time for 1~32
bytes
TA=−40 to +125°C
5
10
ms
tret
Data retention 4)
TA=+55°C
3)
20
years
NRW
Write erase cycles
TA=+25°C
300K
cycles



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