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AT89C5131A-RDTUM 데이터시트(PDF) 172 Page - ATMEL Corporation |
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AT89C5131A-RDTUM 데이터시트(HTML) 172 Page - ATMEL Corporation |
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172 / 188 page ![]() 172 4337K–USB–04/08 AT89C5130A/31A-M 27.4.14 Flash EEPROM Memory and Data EEPROM Memory Table 27-12. Timing Symbol Definitions Table 27-13. Memory AC Timing Vcc = 3.3V ± 10%, TA = -40 to +85°C Figure 27-5. Flash Memory - ISP Waveforms Figure 27-6. Flash Memory - Internal Busy Waveforms Signals Conditions S (Hardware Condition) PSEN, EA L Low R RST V Valid B FBUSY Flag X No Longer Valid Symbol Parameter Min Typ Max Unit T SVRL Input PSEN Valid to RST Edge 50 ns T RLSX Input PSEN Hold after RST Edge 50 ns T BHBL Flash EEPROM Internal Busy (Programming) Time 10 20 ms T BHBL EEPROM Data Internal Busy (Programming) Time 10 20 ms Flash EEPROM program memory write cycles 100K Cycles Configuration bits (fuses bits) memory write cycles (BLJB, X2, OSCON0, OSCON1) 1K Cycles EEPROM Data memory write cycles 100K Cycles RST T SVRL PSEN T RLSX FBUSY bit T BHBL |
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